Enviar artigo por via de e-mail Ultrafast Dynamics of Photoinduced Electron–Hole Plasma in Semiconductor Nanowires
- Autores: Trukhin V.1, Bouravleuv A.2, Mustafin I.1,3, Cirlin G.2, Kakko J.4, Lipsanen H.4
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Afiliações:
- Ioffe Institute
- St. Petersburg Academic University
- ITMO
- Department of Electronics and Nanoengineering
- Edição: Volume 52, Nº 1 (2018)
- Páginas: 19-23
- Seção: XXI International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 13–16, 2017
- URL: https://journals.rcsi.science/1063-7826/article/view/202198
- DOI: https://doi.org/10.1134/S1063782618010244
- ID: 202198
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Resumo
Experimental results obtained in a study of the effect of electron–hole plasma on the generation of terahertz (THz) radiation in semiconductor nanowires grown by metal-organic vapor-phase epitaxy (MOVPE) are presented. It is shown that the temporal dynamics of photoexcited charge carriers in semiconductor nanowires is determined by the transport of carriers, both electrons and holes, and by the time of capture of electrons and holes at surface levels.
Sobre autores
V. Trukhin
Ioffe Institute
Autor responsável pela correspondência
Email: valera.truchin@mail.ioffe.ru
Rússia, St. Petersburg, 194021
A. Bouravleuv
St. Petersburg Academic University
Email: valera.truchin@mail.ioffe.ru
Rússia, St. Petersburg, 194021
I. Mustafin
Ioffe Institute; ITMO
Email: valera.truchin@mail.ioffe.ru
Rússia, St. Petersburg, 194021; St. Petersburg, 197101
G. Cirlin
St. Petersburg Academic University
Email: valera.truchin@mail.ioffe.ru
Rússia, St. Petersburg, 194021
J. Kakko
Department of Electronics and Nanoengineering
Email: valera.truchin@mail.ioffe.ru
Finlândia, Espoo, FIN-02150
H. Lipsanen
Department of Electronics and Nanoengineering
Email: valera.truchin@mail.ioffe.ru
Finlândia, Espoo, FIN-02150
