Ultrafast Dynamics of Photoinduced Electron–Hole Plasma in Semiconductor Nanowires

V. N. Trukhin; A. D. Bouravleuv; I. A. Mustafin; G. E. Cirlin; J. P. Kakko; H. Lipsanen

doi:10.1134/S1063782618010244

Ultrafast Dynamics of Photoinduced Electron–Hole Plasma in Semiconductor Nanowires

Авторы: Trukhin V.N.¹, Bouravleuv A.D.², Mustafin I.A.¹^,3, Cirlin G.E.², Kakko J.P.⁴, Lipsanen H.⁴
Учреждения:
1. Ioffe Institute
2. St. Petersburg Academic University
3. ITMO
4. Department of Electronics and Nanoengineering
Выпуск: Том 52, № 1 (2018)
Страницы: 19-23
Раздел: XXI International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 13–16, 2017
URL: https://journals.rcsi.science/1063-7826/article/view/202198
DOI: https://doi.org/10.1134/S1063782618010244
ID: 202198

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Experimental results obtained in a study of the effect of electron–hole plasma on the generation of terahertz (THz) radiation in semiconductor nanowires grown by metal-organic vapor-phase epitaxy (MOVPE) are presented. It is shown that the temporal dynamics of photoexcited charge carriers in semiconductor nanowires is determined by the transport of carriers, both electrons and holes, and by the time of capture of electrons and holes at surface levels.