Ultrafast Dynamics of Photoinduced Electron–Hole Plasma in Semiconductor Nanowires
- Авторлар: Trukhin V.1, Bouravleuv A.2, Mustafin I.1,3, Cirlin G.2, Kakko J.4, Lipsanen H.4
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Мекемелер:
- Ioffe Institute
- St. Petersburg Academic University
- ITMO
- Department of Electronics and Nanoengineering
- Шығарылым: Том 52, № 1 (2018)
- Беттер: 19-23
- Бөлім: XXI International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 13–16, 2017
- URL: https://journals.rcsi.science/1063-7826/article/view/202198
- DOI: https://doi.org/10.1134/S1063782618010244
- ID: 202198
Дәйексөз келтіру
Аннотация
Experimental results obtained in a study of the effect of electron–hole plasma on the generation of terahertz (THz) radiation in semiconductor nanowires grown by metal-organic vapor-phase epitaxy (MOVPE) are presented. It is shown that the temporal dynamics of photoexcited charge carriers in semiconductor nanowires is determined by the transport of carriers, both electrons and holes, and by the time of capture of electrons and holes at surface levels.
Авторлар туралы
V. Trukhin
Ioffe Institute
Хат алмасуға жауапты Автор.
Email: valera.truchin@mail.ioffe.ru
Ресей, St. Petersburg, 194021
A. Bouravleuv
St. Petersburg Academic University
Email: valera.truchin@mail.ioffe.ru
Ресей, St. Petersburg, 194021
I. Mustafin
Ioffe Institute; ITMO
Email: valera.truchin@mail.ioffe.ru
Ресей, St. Petersburg, 194021; St. Petersburg, 197101
G. Cirlin
St. Petersburg Academic University
Email: valera.truchin@mail.ioffe.ru
Ресей, St. Petersburg, 194021
J. Kakko
Department of Electronics and Nanoengineering
Email: valera.truchin@mail.ioffe.ru
Финляндия, Espoo, FIN-02150
H. Lipsanen
Department of Electronics and Nanoengineering
Email: valera.truchin@mail.ioffe.ru
Финляндия, Espoo, FIN-02150