Информация об авторе
Levitskii, I.
Выпуск | Раздел | Название | Файл |
Том 52, № 7 (2018) | Fabrication, Treatment, and Testing of Materials and Structures | Concentric Hexagonal GaN Structures for Nanophotonics, Fabricated by Selective Vapor-Phase Epitaxy with Ion-Beam Etching | |
Том 52, № 10 (2018) | Fabrication, Treatment, and Testing of Materials and Structures | Selective Epitaxial Growth of III–N Structures Using Ion-Beam Nanolithography | |
Том 52, № 14 (2018) | Lasers and Optoelectronic Devices | Annealing of FIB-Induced Defects in GaAs/AlGaAs Heterostructure | |
Том 52, № 16 (2018) | 26th INTERNATIONAL SYMPOSIUM “NANOSTRUCTURES: PHYSICS AND TECHNOLOGY”. NANOSTRUCTURE TECHNOLOGY | FIB Lithography Challenges of Si3N4/GaN Mask Preparation for Selective Epitaxy | |
Том 53, № 16 (2019) | Nanostructures Technology | Selective Epitaxy of Submicron GaN Structures | |
Том 53, № 16 (2019) | Nanostructures Technology | Effect of Annealing on Luminescence of InGaN/GaN Structures Etched by a Focused Ion Beam |