Выпуск |
Раздел |
Название |
Файл |
Том 50, № 7 (2016) |
Nonelectronic Properties of Semiconductors (Atomic Structure, Diffusion) |
Structural and optical properties of GaAs(100) with a thin surface layer doped with chromium |
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Том 50, № 9 (2016) |
Fabrication, Treatment, and Testing of Materials and Structures |
Growth features and spectroscopic structure investigations of nanoprofiled AlN films formed on misoriented GaAs substrates |
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Том 51, № 8 (2017) |
Fabrication, Treatment, and Testing of Materials and Structures |
Experimental studies of the effects of atomic ordering in epitaxial GaxIn1–xP alloys on their structural and morphological properties |
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Том 51, № 9 (2017) |
Electronic Properties of Semiconductors |
Experimental studies of the effects of atomic ordering in epitaxial GaxIn1 – xP alloys on their optical properties |
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Том 52, № 1 (2018) |
Fabrication, Treatment, and Testing of Materials and Structures |
Influence of Substrate Misorientation on the Composition and the Structural and Photoluminescence Properties of Epitaxial Layers Grown on GaAs(100) |
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Том 52, № 8 (2018) |
Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena |
Effect of Misorientation and Preliminary Etching of the Substrate on the Structural and Optical Properties of Integrated GaAs/Si(100) Heterostructures Produced by Vapor Phase Epitaxy |
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Том 52, № 9 (2018) |
Microcrystalline, Nanocrystalline, Porous, and Composite Semiconductors |
Effect of Conditions of Electrochemical Etching on the Morphological, Structural, and Optical Properties of Porous Gallium Arsenide |
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Том 52, № 13 (2018) |
Nonelectronic Properties of Semiconductors (Atomic Structure, Diffusion) |
Effect of a por-Si Buffer Layer on the Structure and Morphology of Epitaxial InxGa1 – xN/Si(111) Heterostructures |
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Том 53, № 1 (2019) |
Microcrystalline, Nanocrystalline, Porous, and Composite Semiconductors |
Influence of a por-Si Buffer Layer on the Optical Properties of Epitaxial InxGa1 –xN/Si(111) Heterostructures with a Nanocolumnar Film Morphology |
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Том 53, № 7 (2019) |
Fabrication, Treatment, and Testing of Materials and Structures |
Investigation into the Influence of a Buffer Layer of Nanoporous Silicon on the Atomic and Electronic Structure and Optical Properties of AIIIN/por-Si Heterostructures Grown by Plasma-Activated Molecular-Beam Epitaxy |
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Том 53, № 8 (2019) |
Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena |
Investigation of the Current–Voltage Characteristics of New MnO2/GaAs(100) and V2O5/GaAs(100) Heterostructures Subjected to Heat Treatment |
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Том 53, № 8 (2019) |
Fabrication, Treatment, and Testing of Materials and Structures |
Structural and Morphological Properties of Hybrid Heterostructures Based on GaN Grown on a Compliant por-Si(111) Substrate |
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Том 53, № 11 (2019) |
Fabrication, Treatment, and Testing of Materials and Structures |
On the Phase Composition, Morphology, and Optical and Electronic Characteristics of AlN Nanofilms Grown on Misoriented GaAs(100) Substrates |
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