| Выпуск |
Название |
Файл |
| Том 51, № 9 (2017) |
High-temperature annealing of macroporous silicon in an inert-gas flow |
(Eng)
|
|
Astrova E., Preobrazhenskiy N., Pavlov S., Voronkov V.
|
| Том 51, № 9 (2017) |
Characteristic properties of macroporous silicon sintering in an argon atmosphere |
(Eng)
|
|
Astrova E., Preobrazhenskiy N., Pavlov S., Voronkov V.
|
| Том 51, № 8 (2017) |
Effect of electrolyte temperature on the cathodic deposition of Ge nanowires on in and Sn particles in aqueous solutions |
(Eng)
|
|
Gavrilin I., Gromov D., Dronov A., Dubkov S., Volkov R., Trifonov A., Borgardt N., Gavrilov S.
|
| Том 51, № 6 (2017) |
Ab initio study of the electronic and vibrational structures of tetragonal cadmium diarsenide |
(Eng)
|
|
Basalaev Y., Kopytov A., Poplavnoi A., Polygalov Y.
|
| Том 51, № 5 (2017) |
On the photoconductivity of TlInSe2 |
(Eng)
|
|
Ismailov N., Abilov C., Gasanova M.
|
| Том 51, № 4 (2017) |
Specific features of ZnCdS nanoparticles synthesized in different solvents |
(Eng)
|
|
Kyazym-zade A., Jafarov M., Nasirov E., Jahangirova C., Jafarli R.
|
| Том 51, № 4 (2017) |
Anodic processes in the chemical and electrochemical etching of Si crystals in acid-fluoride solutions: Pore formation mechanism |
(Eng)
|
|
Ulin V., Ulin N., Soldatenkov F.
|
| Том 51, № 4 (2017) |
Ab initio calculations of the electron spectrum and density of states of TlFeS2 and TlFeSe2 crystals |
(Eng)
|
|
Ismayilova N., Orudjev H., Jabarov S.
|
| Том 51, № 4 (2017) |
Sensitivity of energy-packed compounds based on superfine and nanoporous silicon to pulsed electrical treatments |
(Eng)
|
|
Zegrya G., Savenkov G., Morozov V., Zegrya A., Ulin N., Ulin V., Lukin A., Bragin V., Oskin I., Mikhailov Y.
|
| Том 51, № 4 (2017) |
Effect of gamma irradiation on the photoluminescence of porous silicon |
(Eng)
|
|
Elistratova M., Romanov N., Goryachev D., Zakharova I., Sreseli O.
|
| Том 51, № 2 (2017) |
Structural studies of ZnS:Cu (5 at %) nanocomposites in porous Al2O3 of different thicknesses |
(Eng)
|
|
Valeev R., Trigub A., Chukavin A., Beltiukov A.
|
| Том 51, № 1 (2017) |
Formation and properties of the buried isolating silicon-dioxide layer in double-layer “porous silicon-on-insulator” structures |
(Eng)
|
|
Ivlev K., Roslikov V., Bolotov V., Knyazev E., Ponomareva I., Kan V., Davletkildeev N.
|
| Том 51, № 1 (2017) |
Study of the parameters of nanoscale layers in nanoheterostructures based on II–VI semiconductor compounds |
(Eng)
|
|
Karavaev M., Kirilenko D., Ivanova E., Popova T., Sitnikova A., Sedova I., Zamoryanskaya M.
|
| Том 51, № 1 (2017) |
Fabrication of oxide heterostructures for promising solar cells of a new generation |
(Eng)
|
|
Bobkov A., Lashkova N., Maximov A., Moshnikov V., Nalimova S.
|
| Том 50, № 9 (2016) |
Laser sintering of a TiO2 nanoporous film on a flexible substrate for application in solar cells |
(Eng)
|
|
Malyukov S., Sayenko A., Kirichenko I.
|
| Том 50, № 9 (2016) |
Dielectric properties of layered FeGaInS4 single crystals in an alternating electric field |
(Eng)
|
|
Mammadov F., Niftiyev N.
|
| Том 50, № 9 (2016) |
Terahertz response of DNA oligonucleotides on the surface of silicon nanostructures |
(Eng)
|
|
Bagraev N., Chernev A., Klyachkin L., Malyarenko A., Emel’yanov A., Dubina M.
|
| Том 50, № 8 (2016) |
Effect of uniaxial deformation on the current–voltage characteristic of a p-Ge/n-GaAs heterostructure |
(Eng)
|
|
Gadzhialiev M., Pirmagomedov Z., Efendieva T.
|
| Том 50, № 7 (2016) |
Nonlinear optical response of planar and spherical CdSe nanocrystals |
(Eng)
|
|
Selyukov A., Isaev A., Vitukhnovsky A., Litvak V., Katsaba A., Korshunov V., Vasiliev R.
|
| Том 50, № 6 (2016) |
Inter atomic force constants of binary and ternary tetrahedral semiconductors |
(Eng)
|
|
Pal S., Tiwari R., Gupta D., Saraswat V., Verma A.
|
| Том 50, № 4 (2016) |
Polytype inclusions and polytype stability in silicon-carbide crystals |
(Eng)
|
|
Avrov D., Lebedev A., Tairov Y.
|
| Том 50, № 3 (2016) |
On Controlling the Hydrophobicity of Nanostructured Zinc-Oxide Layers Grown by Pulsed Electrodeposition |
(Eng)
|
|
Klochko N., Klepikova K., Kopach V., Khrypunov G., Myagchenko Y., Melnychuk E., Lyubov V., Kopach A.
|
| Том 50, № 3 (2016) |
Photoluminescence and Confinement of Excitons in Disordered Porous Films |
(Eng)
|
|
Bondar N., Brodin M., Brodin A., Matveevskaya N.
|
| Том 50, № 3 (2016) |
Influence of the Surface Layer on the Electrochemical Deposition of Metals and Semiconductors into Mesoporous Silicon |
(Eng)
|
|
Chubenko E., Redko S., Sherstnyov A., Petrovich V., Kotov D., Bondarenko V.
|
| Том 50, № 1 (2016) |
Polarized photoluminescence of nc-Si–SiOx nanostructures |
(Eng)
|
|
Michailovska E., Indutnyi I., Shepeliavyi P., Sopinskii N.
|
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