Optical Properties and the Mechanism of the Formation of V 2 O 2  and V 3 O 2  Vacancy–Oxygen Complexes in Irradiated Silicon Crystals

E. A. Tolkacheva; V. P. Markevich; L. I. Murin

doi:10.1134/S1063782618090221

Optical Properties and the Mechanism of the Formation of V₂O₂ and V₃O₂ Vacancy–Oxygen Complexes in Irradiated Silicon Crystals

Авторы: Tolkacheva E.¹, Markevich V.², Murin L.¹
Учреждения:
1. Scientific and Practical Materials Research Center, National Academy of Sciences of Belarus
2. Photon Science Institute, School of Electrical and Electronic Engineering, University of Manchester
Выпуск: Том 52, № 9 (2018)
Страницы: 1097-1103
Раздел: Spectroscopy, Interaction with Radiation
URL: https://journals.rcsi.science/1063-7826/article/view/203955
DOI: https://doi.org/10.1134/S1063782618090221
ID: 203955

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Аннотация
Об авторах
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Аннотация

The processes of the formation and annealing of V_nO_m (n, m ≥ 2) vacancy–oxygen complexes in Czochralski silicon crystals irradiated with fast electrons and reactor neutrons have been studied by infrared absorption Fourier spectroscopy. A number of arguments are presented in favor of identification of absorption bands at 829.3 and 844.2 cm^–1 as being related to local vibrational modes of V₂O₂ and V₃O₂ complexes, respectively.

Ключевые слова

Vacancy-oxygen Complexes, Local Vibrational Modes (LVMs), Fast Electrons, Interstitial Oxygen Atoms, DLTS Data

Об авторах

E. Tolkacheva

Scientific and Practical Materials Research Center, National Academy of Sciences of Belarus

Автор, ответственный за переписку.
Email: talkachova@physics.by
Белоруссия, Minsk, 220072

V. Markevich

Photon Science Institute, School of Electrical and Electronic Engineering, University of Manchester

Email: talkachova@physics.by
Великобритания, Manchester, M13 9PL

L. Murin