Optical Properties and the Mechanism of the Formation of V 2 O 2  and V 3 O 2  Vacancy–Oxygen Complexes in Irradiated Silicon Crystals

E. A. Tolkacheva; V. P. Markevich; L. I. Murin

doi:10.1134/S1063782618090221

Optical Properties and the Mechanism of the Formation of V₂O₂ and V₃O₂ Vacancy–Oxygen Complexes in Irradiated Silicon Crystals

作者: Tolkacheva E.¹, Markevich V.², Murin L.¹
隶属关系:
1. Scientific and Practical Materials Research Center, National Academy of Sciences of Belarus
2. Photon Science Institute, School of Electrical and Electronic Engineering, University of Manchester
期: 卷 52, 编号 9 (2018)
页面: 1097-1103
栏目: Spectroscopy, Interaction with Radiation
URL: https://journals.rcsi.science/1063-7826/article/view/203955
DOI: https://doi.org/10.1134/S1063782618090221
ID: 203955

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详细

The processes of the formation and annealing of V_nO_m (n, m ≥ 2) vacancy–oxygen complexes in Czochralski silicon crystals irradiated with fast electrons and reactor neutrons have been studied by infrared absorption Fourier spectroscopy. A number of arguments are presented in favor of identification of absorption bands at 829.3 and 844.2 cm^–1 as being related to local vibrational modes of V₂O₂ and V₃O₂ complexes, respectively.

关键词

Vacancy-oxygen Complexes, Local Vibrational Modes (LVMs), Fast Electrons, Interstitial Oxygen Atoms, DLTS Data

作者简介

E. Tolkacheva

Scientific and Practical Materials Research Center, National Academy of Sciences of Belarus

编辑信件的主要联系方式.
Email: talkachova@physics.by
白俄罗斯, Minsk, 220072

V. Markevich

Photon Science Institute, School of Electrical and Electronic Engineering, University of Manchester

Email: talkachova@physics.by
英国, Manchester, M13 9PL

L. Murin