Optical Properties and the Mechanism of the Formation of V 2 O 2  and V 3 O 2  Vacancy–Oxygen Complexes in Irradiated Silicon Crystals

E. A. Tolkacheva; V. P. Markevich; L. I. Murin

doi:10.1134/S1063782618090221

Optical Properties and the Mechanism of the Formation of V₂O₂ and V₃O₂ Vacancy–Oxygen Complexes in Irradiated Silicon Crystals

Autores: Tolkacheva E.¹, Markevich V.², Murin L.¹
Afiliações:
1. Scientific and Practical Materials Research Center, National Academy of Sciences of Belarus
2. Photon Science Institute, School of Electrical and Electronic Engineering, University of Manchester
Edição: Volume 52, Nº 9 (2018)
Páginas: 1097-1103
Seção: Spectroscopy, Interaction with Radiation
URL: https://journals.rcsi.science/1063-7826/article/view/203955
DOI: https://doi.org/10.1134/S1063782618090221
ID: 203955

Citar

Texto integral

Acesso aberto
Acesso é fechado

Acesso está concedido
Acesso é fechado

Somente assinantes

Resumo
Sobre autores
Bibliografia
Estatísticas

Resumo

The processes of the formation and annealing of V_nO_m (n, m ≥ 2) vacancy–oxygen complexes in Czochralski silicon crystals irradiated with fast electrons and reactor neutrons have been studied by infrared absorption Fourier spectroscopy. A number of arguments are presented in favor of identification of absorption bands at 829.3 and 844.2 cm^–1 as being related to local vibrational modes of V₂O₂ and V₃O₂ complexes, respectively.

Palavras-chave

Vacancy-oxygen Complexes, Local Vibrational Modes (LVMs), Fast Electrons, Interstitial Oxygen Atoms, DLTS Data

Sobre autores

E. Tolkacheva

Scientific and Practical Materials Research Center, National Academy of Sciences of Belarus

Autor responsável pela correspondência
Email: talkachova@physics.by
Belarus, Minsk, 220072

V. Markevich

Photon Science Institute, School of Electrical and Electronic Engineering, University of Manchester

Email: talkachova@physics.by
Reino Unido da Grã-Bretanha e Irlanda do Norte, Manchester, M13 9PL

L. Murin