Edição |
Título |
Arquivo |
Volume 53, Nº 12 (2019) |
Features of the Temperature Dependences of the Photoconductivity of Organometallic CH3NH3PbI3 Perovskite Films |
(Eng)
|
Amasev D., Tameev A., Kazanskii A.
|
Volume 53, Nº 12 (2019) |
The Effect of Various Annealing Cooling Rates on Electrical and Morphological Properties of TiO2 Thin Films |
(Eng)
|
Asalzadeh S., Yasserian K.
|
Volume 53, Nº 11 (2019) |
Mechanism of Singlet-Oxygen Generation on the Surface of Excited Nanoporous Silicon |
(Eng)
|
Samosvat D., Chikalova-Luzina O., Zegrya G.
|
Volume 53, Nº 11 (2019) |
Effect of Ion-Beam Processing during RF Magnetron Sputtering on the properties of ZnO Films |
(Eng)
|
Krylov P., Alalykin A., Durman E., Zakirova R., Fedotova I.
|
Volume 53, Nº 11 (2019) |
Structure and Electrical Properties of (ZnO/SiO2)25 Thin Films |
(Eng)
|
Volochaev M., Kalinin Y., Kashirin M., Makagonov V., Pankov S., Bassarab V.
|
Volume 53, Nº 11 (2019) |
Investigation of Composition Uniformity in Thickness of GaInAsP Layers Grown on InP Substrates by Vapor-Phase Epitaxy |
(Eng)
|
Gagis G., Levin R., Marichev A., Pushnyi B., Scheglov M., Ber B., Kazantsev D., Kudriavtsev Y., Vlasov A., Popova T., Chistyakov D., Kuchinskii V., Vasil’ev V.
|
Volume 53, Nº 11 (2019) |
Boson Peak Related to Ga Nanoclusters in AlGaN Layers Grown by Plasma-Assisted Molecular Beam Epitaxy at Ga-Rich Conditions |
(Eng)
|
Davydov V., Jmerik V., Roginskii E., Kitaev Y., Beltukov Y., Smirnov M., Nechaev D., Smirnov A., Eliseyev I., Brunkov P., Ivanov S.
|
Volume 53, Nº 11 (2019) |
Relation between the Relaxation of Intrinsic Stimulated Picosecond Emission from GaAs with a Characteristic Charge-Carrier Cooling Time |
(Eng)
|
Ageeva N., Bronevoi I., Zabegaev D., Krivonosov A.
|
Volume 53, Nº 11 (2019) |
Quantum Corrections and Magnetotransport in 3D Dirac Semimetal Cd3 –xMnxAs2 Films |
(Eng)
|
Mekhiya A., Kazakov A., Oveshnikov L., Davydov A., Ril A., Marenkin S., Aronzon B.
|
Volume 53, Nº 10 (2019) |
Electronic States of Nanosystems Based on Cadmium Sulfide in the Zinc-Blende Form |
(Eng)
|
Zavodinsky V., Kuz’menko A.
|
Volume 53, Nº 10 (2019) |
Molecular-Dynamics Simulation of the Low-Temperature Surface Reconstruction of a GaAs(001) Surface during the Nanoindentation Process |
(Eng)
|
Prasolov N., Gutkin A., Brunkov P.
|
Volume 53, Nº 8 (2019) |
Nanostructured ITO/SiO2 Coatings |
(Eng)
|
Markov L., Pavluchenko A., Smirnova I.
|
Volume 53, Nº 7 (2019) |
On the Properties of Isoparametric AlInGaAsP/InP Heterostructures |
(Eng)
|
Alfimova D., Lunin L., Lunina M., Pashchenko A., Danilina E.
|
Volume 53, Nº 7 (2019) |
Development of the Physicochemical Properties of the GaSb(100) Surface in Ammonium Sulfide Solutions |
(Eng)
|
Lebedev M., Lvova T., Shakhmin A., Rakhimova O., Dementev P., Sedova I.
|
Volume 53, Nº 7 (2019) |
Spherical Distributed Bragg Reflector with an Omnidirectional Stop Band in the Near-IR Spectral Range |
(Eng)
|
Medvedev A., Dukin A., Feoktistov N., Golubev V.
|
Volume 53, Nº 6 (2019) |
Electromigration Effect on Vacancy Islands Nucleation on Si(100) Surface during Sublimation |
(Eng)
|
Sitnikov S., Rodyakina E., Latyshev A.
|
Volume 53, Nº 6 (2019) |
Features of Defect Formation in Nanostructured Silicon under Ion Irradiation |
(Eng)
|
Kozhemiako A., Evseev A., Balakshin Y., Shemukhin A.
|
Volume 53, Nº 4 (2019) |
Evolution of Micropits on Large Terraces of the Si(111) Surface during High-Temperature Annealing |
(Eng)
|
Petrov A., Sitnikov S., Kosolobov S., Latyshev A.
|
Volume 53, Nº 4 (2019) |
Effect of a Second-Order Phase Transition on the Electrical Conductivity of Metal/Semiconductor Structures |
(Eng)
|
Nabiullin I., Gadiev R., Lachinov A.
|
Volume 53, Nº 4 (2019) |
Simulated Contrast of Two Dislocations |
(Eng)
|
Ledra M., El Hdiy A.
|
Volume 53, Nº 4 (2019) |
Preparation and Characterization of Sol–Gel Dip Coated Al: ZnO (AZO) Thin Film for Opto-Electronic Application |
(Eng)
|
Kumar K., Valanarasu S., Rosario S.
|
Volume 53, Nº 3 (2019) |
Structure and Properties of Zn-Implanted Si Near-Surface Layer Modification Depending on Irradiation Fluence of 132Xe26+ Ions with Energy of 167 MeV |
(Eng)
|
Privezentsev V., Kulikauskas V., Skuratov V., Zilova O., Burmistrov A., Presnyakov M., Goryachev A.
|
Volume 53, Nº 3 (2019) |
Mechanism and Features of Field Emission in Semiconductors |
(Eng)
|
Zhukov N., Mikhailov A., Mosiyash D.
|
Volume 53, Nº 2 (2019) |
Laser Annealing of Thin ITO Films on Flexible Organic Substrates |
(Eng)
|
Parshina L., Novodvorsky O., Khramova O., Lotin A., Khomenko M., Shchur P.
|
Volume 53, Nº 2 (2019) |
Structural, Optical, and Photosensitive Properties of PbS Films Deposited in the Presence of CaCl2 |
(Eng)
|
Maskaeva L., Mostovshchikova E., Markov V., Voronin V.
|
1 - 25 de 83 resultados |
1 2 3 4 > >>
|