| Шығарылым |
Бөлім |
Атауы |
Файл |
| Том 50, № 5 (2016) |
Physics of Semiconductor Devices |
Multilayer heterostructures for quantum-cascade lasers operating in the terahertz frequency range |
|
| Том 50, № 11 (2016) |
XX International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 14–18, 2016 |
Hybrid AlGaAs/GaAs/AlGaAs nanowires with a quantum dot grown by molecular beam epitaxy on silicon |
|
| Том 50, № 12 (2016) |
XX International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 14–18, 2016 |
Surface passivation of GaAs nanowires by the atomic layer deposition of AlN |
|
| Том 51, № 11 (2017) |
XXI International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 13–16, 2017 |
MBE growth of ultrathin III–V nanowires on a highly mismatched SiC/Si(111) substrate |
|
| Том 52, № 1 (2018) |
XXI International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 13–16, 2017 |
GaP/Si(111) Nanowire Crystals Synthesized by Molecular-Beam Epitaxy with Switching between the Hexagonal and Cubic Phases |
|
| Том 52, № 4 (2018) |
XXV International Symposium “Nanostructures: Physics and Technology”, Saint Petersburg, June 26–30, 2017. Optoelectronics, Optical Properties |
Hybrid GaAs/AlGaAs Nanowire—Quantum dot System for Single Photon Sources |
|
| Том 52, № 5 (2018) |
XXV International Symposium “Nanostructures: Physics and Technology”, Saint Petersburg, Russia, June 26–30, 2017. Nanostructure Characterization |
Optical Properties of GaN Nanowires Grown by MBE on SiC/Si(111) Hybrid Substrate |
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| Том 52, № 5 (2018) |
XXV International Symposium “Nanostructures: Physics and Technology”, Saint Petersburg, Russia, June 26–30, 2017. Nanostructure Characterization |
GaAs Wurtzite Nanowires for Hybrid Piezoelectric Solar Cells |
|
| Том 52, № 5 (2018) |
XXV International Symposium “Nanostructures: Physics and Technology”, Saint Petersburg, Russia, June 26–30, 2017. Nanostructure Technology |
MBE growth and Structural Properties of InAs and InGaAs Nanowires with Different Mole Fraction of In on Si and Strongly Mismatched SiC/Si(111) Substrates |
|
| Том 52, № 11 (2018) |
Xxii International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 12–15, 2018 |
Phosphorus-Based Nanowires Grown by Molecular-Beam Epitaxy on Silicon |
|
| Том 52, № 11 (2018) |
Xxii International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 12–15, 2018 |
MBE Growth and Structural Properties of GaP and InP Nanowires on a SiC Substrate with a Graphene Layer |
|
| Том 52, № 12 (2018) |
Xxii International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 12–15, 2018 |
Solar Cell Based on Core/Shell Nanowires |
|
| Том 52, № 14 (2018) |
Nanostructure Devices |
Electromechanical Switch Based on InxGa1 –xAs Nanowires |
|
| Том 52, № 16 (2018) |
26th INTERNATIONAL SYMPOSIUM “NANOSTRUCTURES: PHYSICS AND TECHNOLOGY”. QUANTUM WELLS AND QUANTUM DOTS |
Structural and Optical Properties of Wurtzite AlGaAs Nanowires Grown by MBE on Si(111) Substrate |
|
| Том 53, № 9 (2019) |
Xxiii International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 11–14, 2019 |
Nonradiative Energy Transfer in Hybrid Nanostructures with Varied Dimensionality |
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