Том 51, № 4 (2017)

Galvanomagnetic effects in twisting bicrystals of Bi_1–xSb_x alloys (0.07 ≤ x ≤ 0.2) at low temperatures and in magnetic fields up to 40 T are studied. It is found that, at small crystallite misorientation angles, the semiconductor–semimetal transition is induced in the central layer (~60-nm-thick) and two adjacent layers (each ~20-nm-thick) of the interface at different values of ultraquantum magnetic field. Bicrystals with large misorientation angles, being located in strong magnetic fields, exhibit quantum oscillations of the magnetoresistance and the Hall effect, thus indicating that the density of states is higher and charge carriers are heavier in the adjacent layers of the interfaces than in the crystallites. Our results show also that twisting bicrystals contain regions with different densities of quantum electronic states, which are determined by the crystallite misorientation angle and magnetic-field strength.

The effect of weak illumination during the initial stage of relaxation of the dark metastable conductivity of an undoped a-Si:H film, photoinduced at T = 425 K, on the rate of its subsequent thermal relaxation is studied. It is found that the kinetics of relaxation upon illumination or in the absence of illumination is described by stretched exponents with the parameters τ₀ and β, which are smaller in the case of illumination. It is shown that a decrease in these parameters increases the rate of thermal relaxation of the dark conductivity of the film. Because the temperature and the illumination intensities at which the study is carried out are low, the changes in the relaxation rate of the metastable conductivity are unlikely associated with significant restructuring of the amorphous network. This may be due to changes in the system of hydrogen bonds, which can result, in particular, from the generation and relaxation of slow photoinduced defects under the influence of illumination.

The dependences of the electron mobility μ_eff in the inversion layers of fully depleted double–gate silicon-on-insulator (SOI) metal–oxide–semiconductor (MOS) transistors on the density N_e of induced charge carriers and temperature T are investigated at different states of the SOI film (inversion–accumulation) from the side of one of the gates. It is shown that at a high density of induced charge carriers of N_e > 6 × 10¹² cm^–2 the μeff(T) dependences allow the components of mobility μ_eff that are related to scattering at surface phonons and from the film/insulator surface roughness to be distinguished. The μ_eff(N_e) dependences can be approximated by the power functions μ_eff(N_e) ∝ N_e⁻ⁿ. The exponents n in the dependences and the dominant mechanisms of scattering of electrons induced near the interface between the SOI film and buried oxide are determined for different N_e ranges and film states from the surface side.

For the first time in Russia, the Si/Al/Ti/Au alloyed contact composition is investigated for the formation of ohmic contacts to AlGaN/GaN heterostructures using thermal annealing. The obtained results are compared with those for conventional Ti/Al/Ni/Au ohmic contacts. Use of the composition under investigation makes it possible to decrease the annealing temperature to 675–700°C, which results in improvement in the morphology of alloyed ohmic contacts in comparison with conventional contacts. The value of the contact resistance using the Si/Al-based composition to the AlGaN/GaN heterostructure is obtained in relation to the temperature and annealing duration. It is shown that no qualitative change in the resistance occurs at an annealing duration of several minutes in the temperature range of 700–750°C. In the temperature range of 675–700°C, there is an asymptotic decrease in the contact resistance with increasing annealing duration. The smallest value of the contact resistance amounts to 0.41 Ω mm.

Impurity iron atoms in vitreous arsenic-selenide As₂Se₃ films modified by iron form one-electron donor centers with an ionization energy of 0.24 (3) eV (the energy is counted from the conduction-band bottom). The Fermi level is shifted with an increase in the iron concentration from the mid-gap to the donorlevel position of iron due to the filling of one-electron states of the acceptor type lying below the Fermi level. At an iron concentration of ≥3 at %, the electron-exchange process is observed between neutral and ionized iron centers resulting in a change both in the electron density and in the tensor of the electric-field gradient at iron-atom nuclei with increasing temperature above 350 K.

Stable colloidal solutions of ZnCdS nanoparticles (3–6 nm in diameter) in polyvinyl alcohol, polyethylene glycol, and H₂O are produced. The size of the synthesized nanoparticles is independent of the relation between precursors. It is shown that stabilization of the particles is defined by the charge-stability factor and can be attained without any additional stabilizing additives. The ZnCdS quantum dots synthesized emit in a wide spectral range from 450 to 600 nm.

The results of ab initio calculations of the electron spectrum of TlFeS₂ and TlFeSe₂ crystals in the antiferromagnetic phase are reported. Calculations are carried out in the context of the density functional theory. The origin of the bands of s, p, and d electron states of Tl, Fe, S, and Se atoms is studied. It is established that, in the antiferromagnetic phase, the crystals possess semiconductor properties. The band gaps are found to be 0.05 and 0.34 eV for TlFeS₂ and TlFeSe₂ crystals, respectively.

The effect of gamma irradiation on the luminescence properties of porous silicon produced by the electrochemical technique is studied. Changes in the photoluminescence intensity between irradiation doses and over a period of several days after the last irradiation are recorded. The quenching of photoluminescence at low irradiation doses and recovery after further irradiation are registered. It is found that porous silicon is strongly oxidized after gamma irradiation and the oxidation process continues for several days after irradiation. It is conceived that the change in the photoluminescence spectra and intensity of porous silicon after gamma irradiation is caused by a change in the passivation type of the porous surface: instead of hydrogen passivation, more stable oxygen passivation is observed. To stabilize the photoluminescence spectra of porous silicon, the use of fullerenes is proposed. No considerable changes in the photoluminescence spectra during irradiation and up to 18 days after irradiation are detected in a porous silicon sample with a thermally deposited fullerene layer. It is shown that porous silicon samples with a deposited C₆₀ layer are stable to gamma irradiation and oxidation.

This study is devoted to the fabrication of molecular semiconductor channels based on polymer molecules with nanoscale electrodes made of single-walled carbon nanotubes. A reproducible technology for forming nanoscale gaps in carbon nanotubes using a focused Ga⁺ ion beam is proposed. Polyaniline molecules are deposited into nanogaps up to 30 nm wide between nanotubes by electrophoresis from N-methyl-2-pyrrolidone solution. As a result, molecular organic transistors are fabricated, in which the field effect is studied and the molecular-channel mobility is determined as 0.1 cm²/(V s) at an on/off current ratio of 5 × 10².

A semiconductor pressure transducer consisting of a sensing resistor implanted into a silicon membrane as an elastic mechanical element is studied by the modulation polarimetry technique. Internal mechanical stresses are detected. The coordinate distributions of uniaxial stresses are measured in two cases: stresses remaining from local crystal doping inhomogeneities and stresses caused by heating by flowing current. The coordinate distribution of the temperature caused by the heat flux released by the resistor current is determined by double integration of the stress function, taking into account corresponding boundary conditions.

The results of time-domain spectroscopy of the terahertz (THz) generation in a structure with an In_0.38Ga_0.62As photoconductive layer are presented. This structure grown by molecular-beam epitaxy on a GaAs substrate using a metamorphic buffer layer allows THz generation with a wide frequency spectrum (to 6 THz). This is due to the additional contribution of the photo-Dember effect to THz generation. The measured optical-to-terahertz conversion efficiency in this structure is 10^–5 at a rather low optical fluence of ~40 μJ/cm², which is higher than that in low-temperature grown GaAs by almost two orders of magnitude.

The dependence of the decay of optical eigenmodes in a vertical cavity laser with intracavity metal layers on the geometric parameters of the system is investigated. It is shown that the lowest decay rate corresponds to the case where the frequency of the cavity eigenmode differs from the Bragg frequency of the cavity mirrors. The spontaneous-emission rate is calculated using the S-quantization formalism. It is found that, for the odd-parity high-energy mode, this rate increases by two orders of magnitude with respect to the freespace emission rate.

Unrelaxed InAs_1–xSb_x (x = 0.43 and 0.38) alloy layers are produced by molecular-beam epitaxy on compositionally graded GaInSb and AlGaInSb buffer layers. The high quality of the thin films produced is confirmed by the results of high-resolution X-ray diffraction analysis and micro-Raman studies. The twomode type of transformation of the phonon spectra of InAs_1–xSb_x alloys is established.

The spatial distribution of photocurrent in the plane of a Si-based p⁺–n junction with embedded self-assembled Ge_xSi_1–x (x ≈ 0.35) nanoislands is studied by scanning near-field optical microscopy with local photoexcitation by a microscope probe at an emission wavelength of 1310 nm (larger than the intrinsicphotosensitivity red edge for Si). Inhomogeneities related to interband optical absorption in separate GeSi nanoislands are observed in the photocurrent images (maps of the spatial distribution of the photocurrent in the input-window plane of the p⁺–n photodiodes). The results of this study demonstrate the possibility of visualizing individual GeSi nanoislands in images of the photocurrent with a spatial resolution of ~100 nm.