Transport and Photosensitivity in Structures: A Composite Layer of Silicon and Gold Nanoparticles on p-Si
- Авторлар: Teplyakov M.1, Ken O.2, Goryachev D.2, Sreseli O.2
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Мекемелер:
- Peter the Great St. Petersburg Polytechnic University
- Ioffe Institute
- Шығарылым: Том 52, № 9 (2018)
- Беттер: 1193-1197
- Бөлім: Microcrystalline, Nanocrystalline, Porous, and Composite Semiconductors
- URL: https://journals.rcsi.science/1063-7826/article/view/204065
- DOI: https://doi.org/10.1134/S106378261809021X
- ID: 204065
Дәйексөз келтіру
Аннотация
The temperature dependences of the current–voltage characteristics and photosensitivity of composite layers of silicon and gold nanoparticles on single-crystal silicon with p-type conductivity are investigated. The current transfer mechanisms in the structures and their influence on the photosensitivity of structures with different amounts of gold in the composite layer are determined.
Авторлар туралы
M. Teplyakov
Peter the Great St. Petersburg Polytechnic University
Хат алмасуға жауапты Автор.
Email: twarm@mail.ru
Ресей, St. Petersburg, 195251
O. Ken
Ioffe Institute
Email: twarm@mail.ru
Ресей, St. Petersburg, 194021
D. Goryachev
Ioffe Institute
Email: twarm@mail.ru
Ресей, St. Petersburg, 194021
O. Sreseli
Ioffe Institute
Email: twarm@mail.ru
Ресей, St. Petersburg, 194021