Enviar artigo por via de e-mail Transport and Photosensitivity in Structures: A Composite Layer of Silicon and Gold Nanoparticles on p-Si
- Autores: Teplyakov M.1, Ken O.2, Goryachev D.2, Sreseli O.2
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Afiliações:
- Peter the Great St. Petersburg Polytechnic University
- Ioffe Institute
- Edição: Volume 52, Nº 9 (2018)
- Páginas: 1193-1197
- Seção: Microcrystalline, Nanocrystalline, Porous, and Composite Semiconductors
- URL: https://journals.rcsi.science/1063-7826/article/view/204065
- DOI: https://doi.org/10.1134/S106378261809021X
- ID: 204065
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Resumo
The temperature dependences of the current–voltage characteristics and photosensitivity of composite layers of silicon and gold nanoparticles on single-crystal silicon with p-type conductivity are investigated. The current transfer mechanisms in the structures and their influence on the photosensitivity of structures with different amounts of gold in the composite layer are determined.
Sobre autores
M. Teplyakov
Peter the Great St. Petersburg Polytechnic University
Autor responsável pela correspondência
Email: twarm@mail.ru
Rússia, St. Petersburg, 195251
O. Ken
Ioffe Institute
Email: twarm@mail.ru
Rússia, St. Petersburg, 194021
D. Goryachev
Ioffe Institute
Email: twarm@mail.ru
Rússia, St. Petersburg, 194021
O. Sreseli
Ioffe Institute
Email: twarm@mail.ru
Rússia, St. Petersburg, 194021
