Transport and Photosensitivity in Structures: A Composite Layer of Silicon and Gold Nanoparticles on p-Si
- Авторы: Teplyakov M.1, Ken O.2, Goryachev D.2, Sreseli O.2
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Учреждения:
- Peter the Great St. Petersburg Polytechnic University
- Ioffe Institute
- Выпуск: Том 52, № 9 (2018)
- Страницы: 1193-1197
- Раздел: Microcrystalline, Nanocrystalline, Porous, and Composite Semiconductors
- URL: https://journals.rcsi.science/1063-7826/article/view/204065
- DOI: https://doi.org/10.1134/S106378261809021X
- ID: 204065
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Аннотация
The temperature dependences of the current–voltage characteristics and photosensitivity of composite layers of silicon and gold nanoparticles on single-crystal silicon with p-type conductivity are investigated. The current transfer mechanisms in the structures and their influence on the photosensitivity of structures with different amounts of gold in the composite layer are determined.
Об авторах
M. Teplyakov
Peter the Great St. Petersburg Polytechnic University
Автор, ответственный за переписку.
Email: twarm@mail.ru
Россия, St. Petersburg, 195251
O. Ken
Ioffe Institute
Email: twarm@mail.ru
Россия, St. Petersburg, 194021
D. Goryachev
Ioffe Institute
Email: twarm@mail.ru
Россия, St. Petersburg, 194021
O. Sreseli
Ioffe Institute
Email: twarm@mail.ru
Россия, St. Petersburg, 194021