Transport and Photosensitivity in Structures: A Composite Layer of Silicon and Gold Nanoparticles on p-Si
- 作者: Teplyakov M.1, Ken O.2, Goryachev D.2, Sreseli O.2
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隶属关系:
- Peter the Great St. Petersburg Polytechnic University
- Ioffe Institute
- 期: 卷 52, 编号 9 (2018)
- 页面: 1193-1197
- 栏目: Microcrystalline, Nanocrystalline, Porous, and Composite Semiconductors
- URL: https://journals.rcsi.science/1063-7826/article/view/204065
- DOI: https://doi.org/10.1134/S106378261809021X
- ID: 204065
如何引用文章
详细
The temperature dependences of the current–voltage characteristics and photosensitivity of composite layers of silicon and gold nanoparticles on single-crystal silicon with p-type conductivity are investigated. The current transfer mechanisms in the structures and their influence on the photosensitivity of structures with different amounts of gold in the composite layer are determined.
作者简介
M. Teplyakov
Peter the Great St. Petersburg Polytechnic University
编辑信件的主要联系方式.
Email: twarm@mail.ru
俄罗斯联邦, St. Petersburg, 195251
O. Ken
Ioffe Institute
Email: twarm@mail.ru
俄罗斯联邦, St. Petersburg, 194021
D. Goryachev
Ioffe Institute
Email: twarm@mail.ru
俄罗斯联邦, St. Petersburg, 194021
O. Sreseli
Ioffe Institute
Email: twarm@mail.ru
俄罗斯联邦, St. Petersburg, 194021