Transport and Photosensitivity in Structures: A Composite Layer of Silicon and Gold Nanoparticles on p-Si


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The temperature dependences of the current–voltage characteristics and photosensitivity of composite layers of silicon and gold nanoparticles on single-crystal silicon with p-type conductivity are investigated. The current transfer mechanisms in the structures and their influence on the photosensitivity of structures with different amounts of gold in the composite layer are determined.

作者简介

M. Teplyakov

Peter the Great St. Petersburg Polytechnic University

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俄罗斯联邦, St. Petersburg, 195251

O. Ken

Ioffe Institute

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俄罗斯联邦, St. Petersburg, 194021

D. Goryachev

Ioffe Institute

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俄罗斯联邦, St. Petersburg, 194021

O. Sreseli

Ioffe Institute

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俄罗斯联邦, St. Petersburg, 194021


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