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Title
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Vol 50, No 3 (2016)
High-Voltage Silicon-Carbide Thyristor with an n-type Blocking Base
Levinshtein M.E., Mnatsakanov T.T., Yurkov S.N., Tandoev A.G., Ryu S., Palmour J.W.
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(Eng)
Vol 53, No 12 (2019)
Recombination of Mobile Carriers Across Boron Excited Levels in Silicon at Low Temperatures
Muratov T.T.
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(Eng)
Vol 53, No 8 (2019)
Influence of Output Optical Losses on the Dynamic Characteristics of 1.55-μm Wafer-Fused Vertical-Cavity Surface-Emitting Lasers
Blokhin S.A., Bobrov M.A., Blokhin A.A., Kuzmenkov A.G., Maleev N.A., Ustinov V.M., Kolodeznyi E.S., Rochas S.S., Babichev A.V., Novikov I.I., Gladyshev A.G., Karachinsky L.Y., Denisov D.V., Voropaev K.O., Ionov A.S., Egorov A.Y.
PDF
(Eng)
Vol 52, No 15 (2018)
Patterns of Variation in the External Quantum Efficiency of InGaN/GaN Green LEDs during Accelerated Tests
Sergeev V.A., Frolov I.V., Shirokov A.A., Radaev O.A.
PDF
(Eng)
Vol 50, No 2 (2016)
Defects in mercury-cadmium telluride heteroepitaxial structures grown by molecular-beam epitaxy on silicon substrates
Mynbaev K.D., Zablotsky S.V., Shilyaev A.V., Bazhenov N.L., Yakushev M.V., Marin D.V., Varavin V.S., Dvoretsky S.A.
PDF
(Eng)
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