| Issue |
Section |
Title |
File |
| Vol 50, No 7 (2016) |
Carbon Systems |
Electron-diffraction study of graphene-film growth stages during the thermal destruction of 6H-SiC (000\(\bar 1\)) in vacuum |
|
| Vol 51, No 8 (2017) |
Spectroscopy, Interaction with Radiation |
Effects of irradiation with 8-MeV protons on n-3C-SiC heteroepitaxial layers |
|
| Vol 51, No 8 (2017) |
Carbon Systems |
Study of the crystal and electronic structure of graphene films grown on 6H-SiC (0001) |
|
| Vol 52, No 11 (2018) |
Xxii International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 12–15, 2018 |
MBE Growth and Structural Properties of GaP and InP Nanowires on a SiC Substrate with a Graphene Layer |
|
| Vol 52, No 12 (2018) |
Microcrystalline, Nanocrystalline, Porous, and Composite Semiconductors |
Electrical Properties of GaAs Nanowires Grown on Graphene/SiC Hybrid Substrates |
|
| Vol 52, No 12 (2018) |
Carbon Systems |
Transition between Electron Localization and Antilocalization and Manifestation of the Berry Phase in Graphene on a SiC Surface |
|
| Vol 52, No 14 (2018) |
Graphene |
High Quality Graphene Grown by Sublimation on 4H-SiC (0001) |
|
| Vol 53, No 14 (2019) |
Nanostructures Characterization |
Optical Estimation of the Carrier Concentration and the Value of Strain in Monolayer Graphene Grown on 4H-SiC |
|
