Semiconductors
ISSN 1063-7826 (Print)
ISSN 1090-6479 (Online)
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Keywords
GaAs
GaAs Substrate
GaN
Gallium Nitride
Sapphire Substrate
Versus Characteristic
annealing
carbon nanotubes
doping
exciton
graphene
heterostructure
heterostructures
luminescence
molecular-beam epitaxy
photoconductivity
photoluminescence
quantum dots
quantum well
silicon
thin films
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Keywords
GaAs
GaAs Substrate
GaN
Gallium Nitride
Sapphire Substrate
Versus Characteristic
annealing
carbon nanotubes
doping
exciton
graphene
heterostructure
heterostructures
luminescence
molecular-beam epitaxy
photoconductivity
photoluminescence
quantum dots
quantum well
silicon
thin films
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Author Details
Author Details
Lebedev, S. P.
Issue
Section
Title
File
Vol 50, No 7 (2016)
Carbon Systems
Electron-diffraction study of graphene-film growth stages during the thermal destruction of 6
H
-SiC (000
\(\bar 1\)
) in vacuum
Vol 51, No 8 (2017)
Spectroscopy, Interaction with Radiation
Effects of irradiation with 8-MeV protons on
n
-3
C
-SiC heteroepitaxial layers
Vol 51, No 8 (2017)
Carbon Systems
Study of the crystal and electronic structure of graphene films grown on 6
H
-SiC (0001)
Vol 52, No 11 (2018)
Xxii International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 12–15, 2018
MBE Growth and Structural Properties of GaP and InP Nanowires on a SiC Substrate with a Graphene Layer
Vol 52, No 12 (2018)
Microcrystalline, Nanocrystalline, Porous, and Composite Semiconductors
Electrical Properties of GaAs Nanowires Grown on Graphene/SiC Hybrid Substrates
Vol 52, No 12 (2018)
Carbon Systems
Transition between Electron Localization and Antilocalization and Manifestation of the Berry Phase in Graphene on a SiC Surface
Vol 52, No 14 (2018)
Graphene
High Quality Graphene Grown by Sublimation on 4
H
-SiC (0001)
Vol 53, No 14 (2019)
Nanostructures Characterization
Optical Estimation of the Carrier Concentration and the Value of Strain in Monolayer Graphene Grown on 4
H
-SiC
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