Semiconductors
ISSN 1063-7826 (Print)
ISSN 1090-6479 (Online)
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Keywords
GaAs
GaAs Substrate
GaN
Gallium Nitride
Sapphire Substrate
Versus Characteristic
annealing
carbon nanotubes
doping
exciton
graphene
heterostructure
heterostructures
luminescence
molecular-beam epitaxy
photoconductivity
photoluminescence
quantum dots
quantum well
silicon
thin films
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Keywords
GaAs
GaAs Substrate
GaN
Gallium Nitride
Sapphire Substrate
Versus Characteristic
annealing
carbon nanotubes
doping
exciton
graphene
heterostructure
heterostructures
luminescence
molecular-beam epitaxy
photoconductivity
photoluminescence
quantum dots
quantum well
silicon
thin films
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Author Details
Author Details
Levinshtein, M. E.
Issue
Section
Title
File
Vol 50, No 3 (2016)
Physics of Semiconductor Devices
High-Voltage Silicon-Carbide Thyristor with an
n
-type Blocking Base
Vol 50, No 5 (2016)
Physics of Semiconductor Devices
Isothermal current–voltage characteristics of high-voltage 4
H
-SiC junction barrier Schottky rectifiers
Vol 51, No 2 (2017)
Physics of Semiconductor Devices
Analysis of the impact of non-1D effects on the gate switch-on current in 4
H
-SiC thyristors
Vol 51, No 6 (2017)
Physics of Semiconductor Devices
On the limit of the injection ability of silicon
p
+
–
n
junctions as a result of fundamental physical effects
Vol 51, No 8 (2017)
Physics of Semiconductor Devices
Current–voltage characteristics of Schottky diodes at high current densities under the injection of minority carriers
Vol 51, No 9 (2017)
Physics of Semiconductor Devices
Transient switch-off of a 4
H
-SiC bipolar transistor from the deep-saturation mode
Vol 53, No 10 (2019)
Physics of Semiconductor Devices
Impact of High-Energy Electron Irradiation on Surge Currents in 4
H
-SiC JBS Schottky Diodes
Vol 53, No 12 (2019)
Electronic Properties of Semiconductors
Effect of Irradiation with 15-MeV Protons on Low Frequency Noise in Power SiC MOSFETs
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