Informaçao sobre o Autor

Kotlyar, K. P.

Edição Seção Título Arquivo
Volume 51, Nº 11 (2017) XXI International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 13–16, 2017 MBE growth of ultrathin III–V nanowires on a highly mismatched SiC/Si(111) substrate
Volume 52, Nº 2 (2018) Surfaces, Interfaces, and Thin Films Oxygen Nitrogen Mixture Effect on Aluminum Nitride Synthesis by Reactive Ion Plasma Deposition
Volume 52, Nº 5 (2018) XXV International Symposium “Nanostructures: Physics and Technology”, Saint Petersburg, Russia, June 26–30, 2017. Nanostructure Characterization The Features of GaAs Nanowire SEM Images
Volume 52, Nº 5 (2018) XXV International Symposium “Nanostructures: Physics and Technology”, Saint Petersburg, Russia, June 26–30, 2017. Nanostructure Technology MBE growth and Structural Properties of InAs and InGaAs Nanowires with Different Mole Fraction of In on Si and Strongly Mismatched SiC/Si(111) Substrates
Volume 52, Nº 11 (2018) Xxii International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 12–15, 2018 Phosphorus-Based Nanowires Grown by Molecular-Beam Epitaxy on Silicon
Volume 52, Nº 11 (2018) Xxii International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 12–15, 2018 MBE Growth and Structural Properties of GaP and InP Nanowires on a SiC Substrate with a Graphene Layer
Volume 52, Nº 12 (2018) Xxii International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 12–15, 2018 Solar Cell Based on Core/Shell Nanowires
Volume 52, Nº 16 (2018) 26th INTERNATIONAL SYMPOSIUM “NANOSTRUCTURES: PHYSICS AND TECHNOLOGY”. NANOSTRUCTURE TECHNOLOGY InGaN/GaN QDs Nanorods: Processing and Properties
Volume 52, Nº 16 (2018) 26th INTERNATIONAL SYMPOSIUM “NANOSTRUCTURES: PHYSICS AND TECHNOLOGY”. NANOSTRUCTURE TECHNOLOGY Processing of GaN/Si(111) Epitaxial Structures for MEMS Applications
Volume 52, Nº 16 (2018) 26th INTERNATIONAL SYMPOSIUM “NANOSTRUCTURES: PHYSICS AND TECHNOLOGY”. QUANTUM WELLS AND QUANTUM DOTS Structural and Optical Properties of Wurtzite AlGaAs Nanowires Grown by MBE on Si(111) Substrate