| Шығарылым |
Бөлім |
Атауы |
Файл |
| Том 52, № 7 (2018) |
Fabrication, Treatment, and Testing of Materials and Structures |
Concentric Hexagonal GaN Structures for Nanophotonics, Fabricated by Selective Vapor-Phase Epitaxy with Ion-Beam Etching |
|
| Том 52, № 14 (2018) |
Lasers and Optoelectronic Devices |
Annealing of FIB-Induced Defects in GaAs/AlGaAs Heterostructure |
|
| Том 52, № 16 (2018) |
26th INTERNATIONAL SYMPOSIUM “NANOSTRUCTURES: PHYSICS AND TECHNOLOGY”. NANOSTRUCTURE TECHNOLOGY |
FIB Lithography Challenges of Si3N4/GaN Mask Preparation for Selective Epitaxy |
|
| Том 53, № 11 (2019) |
Fabrication, Treatment, and Testing of Materials and Structures |
Changes in the Photoluminescence Properties of Semiconductor Heterostructures after Ion-Beam Etching |
|
| Том 53, № 16 (2019) |
Nanostructures Technology |
Etching of Disc and Ring Patterns in Si3N4/GaN Structure by Ga+ FIB |
|
| Том 53, № 16 (2019) |
Nanostructures Technology |
Selective Epitaxy of Submicron GaN Structures |
|
| Том 53, № 16 (2019) |
Nanostructures Technology |
Effect of Annealing on Luminescence of InGaN/GaN Structures Etched by a Focused Ion Beam |
|
