Semiconductors
ISSN 1063-7826 (Print)
ISSN 1090-6479 (Online)
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Keywords
GaAs
GaAs Substrate
GaN
Gallium Nitride
Sapphire Substrate
Versus Characteristic
annealing
carbon nanotubes
doping
exciton
graphene
heterostructure
heterostructures
luminescence
molecular-beam epitaxy
photoconductivity
photoluminescence
quantum dots
quantum well
silicon
thin films
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Keywords
GaAs
GaAs Substrate
GaN
Gallium Nitride
Sapphire Substrate
Versus Characteristic
annealing
carbon nanotubes
doping
exciton
graphene
heterostructure
heterostructures
luminescence
molecular-beam epitaxy
photoconductivity
photoluminescence
quantum dots
quantum well
silicon
thin films
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Author Details
Author Details
Shek, E. I.
Issue
Section
Title
File
Vol 50, No 2 (2016)
Physics of Semiconductor Devices
Si:Si LEDs with room-temperature dislocation-related luminescence
Vol 50, No 2 (2016)
Physics of Semiconductor Devices
Effect of the fabrication conditions of SiGe LEDs on their luminescence and electrical properties
Vol 50, No 2 (2016)
Physics of Semiconductor Devices
Electroluminescence properties of LEDs based on electron-irradiated
p
-Si
Vol 51, No 9 (2017)
Electronic Properties of Semiconductors
Influence of measurement temperature on the luminescence properties of (113) defects in oxygen-implanted silicon
Vol 53, No 2 (2019)
Electronic Properties of Semiconductors
Influence of Annealing Temperature on Electrically Active Centers in Silicon Implanted with Germanium Ions
Vol 53, No 2 (2019)
Spectroscopy, Interaction with Radiation
Dislocation-Related Photoluminescence in Silicon Implanted with Germanium Ions
Vol 53, No 4 (2019)
Nonelectronic Properties of Semiconductors (Atomic Structure, Diffusion)
Defect Formation under Nitrogen-Ion Implantation and Subsequent Annealing in GaAs Structures with an Uncovered Surface and a Surface Covered with an AlN Film
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