🔧На сайте запланированы технические работы
25.12.2025 в промежутке с 18:00 до 21:00 по Московскому времени (GMT+3) на сайте будут проводиться плановые технические работы. Возможны перебои с доступом к сайту. Приносим извинения за временные неудобства. Благодарим за понимание!
🔧Site maintenance is scheduled.
Scheduled maintenance will be performed on the site from 6:00 PM to 9:00 PM Moscow time (GMT+3) on December 25, 2025. Site access may be interrupted. We apologize for the inconvenience. Thank you for your understanding!

 

Автор туралы ақпарат

Kirilenko, D. A.

Шығарылым Бөлім Атауы Файл
Том 50, № 7 (2016) Fabrication, Treatment, and Testing of Materials and Structures Chloride epitaxy of β-Ga2O3 layers grown on c-sapphire substrates
Том 51, № 1 (2017) Microcrystalline, Nanocrystalline, Porous, and Composite Semiconductors Study of the parameters of nanoscale layers in nanoheterostructures based on II–VI semiconductor compounds
Том 52, № 2 (2018) Surfaces, Interfaces, and Thin Films Oxygen Nitrogen Mixture Effect on Aluminum Nitride Synthesis by Reactive Ion Plasma Deposition
Том 52, № 5 (2018) XXV International Symposium “Nanostructures: Physics and Technology”, Saint Petersburg, Russia, June 26–30, 2017. Nanostructure Characterization The Features of GaAs Nanowire SEM Images
Том 52, № 5 (2018) XXV International Symposium “Nanostructures: Physics and Technology”, Saint Petersburg, Russia, June 26–30, 2017. Nanostructure Technology Site-Controlled Growth of GaN Nanorods with Inserted InGaN Quantum Wells on μ-Cone Patterned Sapphire Substrates by Plasma-Assisted MBE
Том 52, № 11 (2018) Xxii International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 12–15, 2018 Phosphorus-Based Nanowires Grown by Molecular-Beam Epitaxy on Silicon
Том 52, № 11 (2018) Xxii International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 12–15, 2018 MBE Growth and Structural Properties of GaP and InP Nanowires on a SiC Substrate with a Graphene Layer
Том 52, № 16 (2018) 26th INTERNATIONAL SYMPOSIUM “NANOSTRUCTURES: PHYSICS AND TECHNOLOGY”. NANOSTRUCTURE CHARACTERIZATION Atomic Force Microscopy Study of Monodisperse Carbon Nanoparticles
Том 52, № 16 (2018) 26th INTERNATIONAL SYMPOSIUM “NANOSTRUCTURES: PHYSICS AND TECHNOLOGY”. NANOSTRUCTURE TECHNOLOGY Self-Catalyzed MBE-Grown GaP Nanowires on Si(111): V/III Ratio Effects on the Morphology and Crystal Phase Switching
Том 53, № 8 (2019) Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena Template Synthesis of Monodisperse Submicrometer Spherical Nanoporous Silicon Particles
Том 53, № 8 (2019) Fabrication, Treatment, and Testing of Materials and Structures Molecular-Beam Epitaxy of Two-Dimensional GaSe Layers on GaAs(001) and GaAs(112) Substrates: Structural and Optical Properties