| Issue |
Title |
File |
| Vol 50, No 9 (2016) |
Photovoltaic laser-power converter based on AlGaAs/GaAs heterostructures |
(Eng)
|
|
Khvostikov V.P., Kalyuzhnyy N.A., Mintairov S.A., Sorokina S.V., Potapovich N.S., Emelyanov V.M., Timoshina N.K., Andreev V.M.
|
| Vol 50, No 9 (2016) |
On the problem of internal optical loss and current leakage in laser heterostructures based on AlGaInAs/InP solid solutions |
(Eng)
|
|
Veselov D.A., Shashkin I.S., Bakhvalov K.V., Lyutetskiy A.V., Pikhtin N.A., Rastegaeva M.G., Slipchenko S.O., Bechvay E.A., Strelets V.A., Shamakhov V.V., Tarasov I.S.
|
| Vol 50, No 9 (2016) |
Synthesis and study of thin TiO2 films doped with silver nanoparticles for the antireflection coatings and transparent contacts of photovoltaic converters |
(Eng)
|
|
Lunin L.S., Lunina M.L., Kravtsov A.A., Sysoev I.A., Blinov A.V.
|
| Vol 50, No 8 (2016) |
Dynamic thermoelectric model of a light-emitting structure with a current spreading layer |
(Eng)
|
|
Sergeev V.A., Hodakov A.M.
|
| Vol 50, No 8 (2016) |
Comparison of the characteristics of solar cells fabricated from multicrystalline silicon with those fabricated from silicon obtained by the monolike technology |
(Eng)
|
|
Betekbaev A.A., Mukashev B.N., Pelissier L., Lay P., Fortin G., Bounaas L., Skakov D.M., Kalygulov D.A., Turmagambetov T.S., Lee V.V.
|
| Vol 50, No 8 (2016) |
Transition times between the extremum points of the current–voltage characteristic of a resonant tunneling diode with hysteresis |
(Eng)
|
|
Grishakov K.S., Elesin V.F.
|
| Vol 50, No 8 (2016) |
Optical properties of photodetectors based on single GaN nanowires with a transparent graphene contact |
(Eng)
|
|
Babichev A.V., Zhang H., Guan N., Egorov A.Y., Julien F.H., Messanvi A., Durand C., Eymery J., Tchernycheva M.
|
| Vol 50, No 8 (2016) |
Heterojunction low-barrier gaas diodes with an improved reverse I–V characteristic |
(Eng)
|
|
Yunusov I.V., Kagadei V.A., Fazleeva A.Y., Arykov V.S.
|
| Vol 50, No 8 (2016) |
Study of the photoinduced degradation of tandem photovoltaic converters based on a-Si:H/μc-Si:H |
(Eng)
|
|
Abramov A.S., Andronikov D.A., Emtsev K.V., Kukin A.V., Semenov A.V., Terukova E.E., Titov A.S., Yakovlev S.A.
|
| Vol 50, No 7 (2016) |
Effect of the anode-emitter injection efficiency on the characteristics of hybrid SIT–MOS transistors |
(Eng)
|
|
Kyuregyan A.S., Gorbatyuk A.V., Ivanov B.V.
|
| Vol 50, No 7 (2016) |
Electrochemical lithiation of silicon with varied crystallographic orientation |
(Eng)
|
|
Astrova E.V., Rumyantsev A.M., Li G.V., Nashchekin A.V., Kazantsev D.Y., Ber B.Y., Zhdanov V.V.
|
| Vol 50, No 7 (2016) |
On current spreading in solar cells: a two-parameter tube model |
(Eng)
|
|
Mintairov M.A., Evstropov V.V., Mintairov S.A., Timoshina N.K., Shvarts M.Z., Kalyuzhnyy N.A.
|
| Vol 50, No 6 (2016) |
Dependence of the conductivity on the active-region thickness in GaAs thin-film Schottky diodes |
(Eng)
|
|
Zuev S.A., Kilessa G.V., Asanov E.E., Starostenko V.V., Pokrova S.V.
|
| Vol 50, No 6 (2016) |
Experimental determination of the derivative of the current–voltage characteristic of a nonlinear semiconductor structure using modulation Fourier analysis |
(Eng)
|
|
Kuzmichev N.D., Vasyutin M.A., Shilkin D.A.
|
| Vol 50, No 6 (2016) |
Narrowing of the emission spectra of high-power laser diodes with a volume Bragg grating recorded in photo-thermo-refractive glass |
(Eng)
|
|
Ivanov S.A., Nikonorov N.V., Ignat’ev A.I., Zolotarev V.V., Lubyanskiy Y.V., Pikhtin N.A., Tarasov I.S.
|
| Vol 50, No 6 (2016) |
Method for increasing the carrier mobility in the channel of the 4H-SiC MOSFET |
(Eng)
|
|
Mikhaylov A.I., Afanasyev A.V., Ilyin V.A., Luchinin V.V., Reshanov S.A., Schöner A.
|
| Vol 50, No 6 (2016) |
Switching between the mode-locking and Q-switching modes in two-section QW lasers upon a change in the absorber properties due to the Stark effect |
(Eng)
|
|
Gadzhiyev I.M., Buyalo M.S., Gubenko A.E., Egorov A.Y., Usikova A.A., Il’inskaya N.D., Lyutetskiy A.V., Zadiranov Y.M., Portnoi E.L.
|
| Vol 50, No 5 (2016) |
Photodiode 1 × 64 linear array based on a double p-InAsSbP/n-InAs0.92Sb0.08/n+-InAs heterostructure |
(Eng)
|
|
Il’inskaya N.D., Karandashev S.A., Karpukhina N.G., Lavrov A.A., Matveev B.A., Remennyi M.A., Stus N.M., Usikova A.A.
|
| Vol 50, No 5 (2016) |
GaAs/InGaAsN heterostructures for multi-junction solar cells |
(Eng)
|
|
Nikitina E.V., Gudovskikh A.S., Lazarenko A.A., Pirogov E.V., Sobolev M.S., Zelentsov K.S., Morozov I.A., Egorov A.Y.
|
| Vol 50, No 5 (2016) |
Isothermal current–voltage characteristics of high-voltage 4H-SiC junction barrier Schottky rectifiers |
(Eng)
|
|
Levinshtein M.E., Ivanov P.A., Zhang Q.J., Palmour J.W.
|
| Vol 50, No 5 (2016) |
Multilayer heterostructures for quantum-cascade lasers operating in the terahertz frequency range |
(Eng)
|
|
Zhukov A.E., Cirlin G.E., Reznik R.R., Samsonenko Y.B., Khrebtov A.I., Kaliteevski M.A., Ivanov K.A., Kryzhanovskaya N.V., Maximov M.V., Alferov Z.I.
|
| Vol 50, No 5 (2016) |
Dependence of the electron capture velocity on the quantum-well depth in semiconductor lasers |
(Eng)
|
|
Sokolova Z.N., Bakhvalov K.V., Lyutetskiy A.V., Pikhtin N.A., Tarasov I.S., Asryan L.V.
|
| Vol 50, No 5 (2016) |
Features of carrier tunneling between the silicon valence band and metal in devices based on the Al/high-K oxide/SiO2/Si structure |
(Eng)
|
|
Vexler M.I., Grekhov I.V.
|
| Vol 50, No 5 (2016) |
Radiation-stimulated processes in transistor temperature sensors |
(Eng)
|
|
Pavlyk B.V., Grypa A.S.
|
| Vol 50, No 5 (2016) |
Biosensor properties of SOI nanowire transistors with a PEALD Al2O3 dielectric protective layer |
(Eng)
|
|
Popov V.P., Ilnitskii M.A., Zhanaev E.D., Myakon’kich A.V., Rudenko K.V., Glukhov A.V.
|
| 151 - 175 of 198 Items |
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