XXI International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 13–16, 2017

Шығарылым Атауы Файл
Том 51, № 11 (2017) Semiconductor Structures with a one-dimensional quantum channel and in-plane side gates fabricated by pulse force nanolithography PDF
(Eng)
Borisov V., Kuvshinova N., Kurochka S., Sizov V., Stepushkin M., Temiryazev A.
Том 51, № 11 (2017) Effect of electric field on the ratio between the rashba and dresselhaus parameters in III–V heterostructures PDF
(Eng)
Degtyarev V., Khazanova S., Konakov A.
Том 51, № 11 (2017) Capacitance spectroscopy of hole traps in high-resistance gallium-arsenide structures grown by liquid-phase epitaxy PDF
(Eng)
Murel A., Shmagin V., Krukov V., Strelchenko S., Surovegina E., Shashkin V.
Том 51, № 11 (2017) Features of the selective manganese doping of GaAs structures PDF
(Eng)
Kalentyeva I., Vikhrova O., Danilov Y., Zvonkov B., Kudrin A., Dorokhin M., Pavlov D., Antonov I., Drozdov M., Usov Y.
Том 51, № 11 (2017) Analysis of the GaN-HEMT parameters before and after gamma-neutron irradiation PDF
(Eng)
Tarasova E., Obolensky S., Galkin O., Hananova A., Makarov A.
Том 51, № 11 (2017) Contactless characterization of manganese and carbon delta-layers in gallium arsenide PDF
(Eng)
Komkov O., Kudrin A.
Том 51, № 11 (2017) Cyclotron resonance features in a three-dimensional topological insulators PDF
(Eng)
Turkevich R., Demikhovskii V., Protogenov A.
Том 51, № 11 (2017) Inhomogeneous dopant distribution in III–V nanowires PDF
(Eng)
Leshchenko E., Dubrovskii V.
Том 51, № 11 (2017) Giant effect of terahertz-radiation rectification in periodic graphene plasmonic structures PDF
(Eng)
Fateev D., Mashinsky K., Qin H., Sun J., Popov V.
Том 51, № 11 (2017) Molecular-beam epitaxy of InGaAs/InAlAs/AlAs structures for heterobarrier varactors PDF
(Eng)
Kulagina M., Kuzmenkov A., Nevedomskii V., Guseva Y., Maleev S., Ladenkov I., Fefelova E., Fefelov A., Ustinov V., Maleev N., Belyakov V., Vasil’ev A., Bobrov M., Blokhin S.
Том 51, № 11 (2017) Energy relaxation in a quantum dot at the edge of a two-dimensional topological insulator PDF
(Eng)
Khomitsky D., Lavrukhina E., Chubanov A., Njiya N.
Том 51, № 11 (2017) Transport of hot charge carriers in Si, GaAs, InGaAs, and GaN submicrometer semiconductor structures with nanometer-scale clusters of radiation-induced defects PDF
(Eng)
Zabavichev I., Obolenskaya E., Potekhin A., Puzanov A., Obolensky S., Kozlov V.
Том 51, № 11 (2017) Luminescence of a near-surface GaAs/AlAs heterojunction in AlAs-based heterostructures PDF
(Eng)
Nikiforov V., Abramkin D., Shamirzaev T.
Том 51, № 11 (2017) Optimization of the superlattice parameters for THz diodes PDF
(Eng)
Pavelyev D., Vasilev A., Kozlov V., Obolenskaya E., Obolensky S., Ustinov V.
Том 51, № 11 (2017) Effect of the surface on transport phenomena in PbSnTe:In/BaF2 films PDF
(Eng)
Akimov A., Klimov A., Suprun S., Epov V.
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