| Шығарылым |
Атауы |
Файл |
| Том 51, № 11 (2017) |
Semiconductor Structures with a one-dimensional quantum channel and in-plane side gates fabricated by pulse force nanolithography |
(Eng)
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Borisov V., Kuvshinova N., Kurochka S., Sizov V., Stepushkin M., Temiryazev A.
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| Том 51, № 11 (2017) |
Effect of electric field on the ratio between the rashba and dresselhaus parameters in III–V heterostructures |
(Eng)
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Degtyarev V., Khazanova S., Konakov A.
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| Том 51, № 11 (2017) |
Capacitance spectroscopy of hole traps in high-resistance gallium-arsenide structures grown by liquid-phase epitaxy |
(Eng)
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Murel A., Shmagin V., Krukov V., Strelchenko S., Surovegina E., Shashkin V.
|
| Том 51, № 11 (2017) |
Features of the selective manganese doping of GaAs structures |
(Eng)
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Kalentyeva I., Vikhrova O., Danilov Y., Zvonkov B., Kudrin A., Dorokhin M., Pavlov D., Antonov I., Drozdov M., Usov Y.
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| Том 51, № 11 (2017) |
Analysis of the GaN-HEMT parameters before and after gamma-neutron irradiation |
(Eng)
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Tarasova E., Obolensky S., Galkin O., Hananova A., Makarov A.
|
| Том 51, № 11 (2017) |
Contactless characterization of manganese and carbon delta-layers in gallium arsenide |
(Eng)
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Komkov O., Kudrin A.
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| Том 51, № 11 (2017) |
Cyclotron resonance features in a three-dimensional topological insulators |
(Eng)
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Turkevich R., Demikhovskii V., Protogenov A.
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| Том 51, № 11 (2017) |
Inhomogeneous dopant distribution in III–V nanowires |
(Eng)
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Leshchenko E., Dubrovskii V.
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| Том 51, № 11 (2017) |
Giant effect of terahertz-radiation rectification in periodic graphene plasmonic structures |
(Eng)
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Fateev D., Mashinsky K., Qin H., Sun J., Popov V.
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| Том 51, № 11 (2017) |
Molecular-beam epitaxy of InGaAs/InAlAs/AlAs structures for heterobarrier varactors |
(Eng)
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Kulagina M., Kuzmenkov A., Nevedomskii V., Guseva Y., Maleev S., Ladenkov I., Fefelova E., Fefelov A., Ustinov V., Maleev N., Belyakov V., Vasil’ev A., Bobrov M., Blokhin S.
|
| Том 51, № 11 (2017) |
Energy relaxation in a quantum dot at the edge of a two-dimensional topological insulator |
(Eng)
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Khomitsky D., Lavrukhina E., Chubanov A., Njiya N.
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| Том 51, № 11 (2017) |
Transport of hot charge carriers in Si, GaAs, InGaAs, and GaN submicrometer semiconductor structures with nanometer-scale clusters of radiation-induced defects |
(Eng)
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Zabavichev I., Obolenskaya E., Potekhin A., Puzanov A., Obolensky S., Kozlov V.
|
| Том 51, № 11 (2017) |
Luminescence of a near-surface GaAs/AlAs heterojunction in AlAs-based heterostructures |
(Eng)
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Nikiforov V., Abramkin D., Shamirzaev T.
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| Том 51, № 11 (2017) |
Optimization of the superlattice parameters for THz diodes |
(Eng)
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Pavelyev D., Vasilev A., Kozlov V., Obolenskaya E., Obolensky S., Ustinov V.
|
| Том 51, № 11 (2017) |
Effect of the surface on transport phenomena in PbSnTe:In/BaF2 films |
(Eng)
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Akimov A., Klimov A., Suprun S., Epov V.
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| Нәтижелер 40 - 26/40 |
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