Polytype inclusions and polytype stability in silicon-carbide crystals
- Авторлар: Avrov D.1, Lebedev A.2, Tairov Y.1
-
Мекемелер:
- St. Petersburg State Electrotechnical University
- Ioffe Physical—Technical Institute
- Шығарылым: Том 50, № 4 (2016)
- Беттер: 494-501
- Бөлім: Microcrystalline, Nanocrystalline, Porous, and Composite Semiconductors
- URL: https://journals.rcsi.science/1063-7826/article/view/196997
- DOI: https://doi.org/10.1134/S1063782616040059
- ID: 196997
Дәйексөз келтіру
Аннотация
On the basis of both published data and our own experimental data we consider the main aspects of the problem related to ensuring polytype stability for ingots of grown 4H and 6H silicon-carbide compounds.
Негізгі сөздер
Авторлар туралы
D. Avrov
St. Petersburg State Electrotechnical University
Email: siclab-tairov@yandex.ru
Ресей, St. Petersburg, 197376
A. Lebedev
Ioffe Physical—Technical Institute
Email: siclab-tairov@yandex.ru
Ресей, St. Petersburg, 194021
Yu. Tairov
St. Petersburg State Electrotechnical University
Хат алмасуға жауапты Автор.
Email: siclab-tairov@yandex.ru
Ресей, St. Petersburg, 197376