Enviar artigo por via de e-mail Polytype inclusions and polytype stability in silicon-carbide crystals
- Autores: Avrov D.1, Lebedev A.2, Tairov Y.1
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Afiliações:
- St. Petersburg State Electrotechnical University
- Ioffe Physical—Technical Institute
- Edição: Volume 50, Nº 4 (2016)
- Páginas: 494-501
- Seção: Microcrystalline, Nanocrystalline, Porous, and Composite Semiconductors
- URL: https://journals.rcsi.science/1063-7826/article/view/196997
- DOI: https://doi.org/10.1134/S1063782616040059
- ID: 196997
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Resumo
On the basis of both published data and our own experimental data we consider the main aspects of the problem related to ensuring polytype stability for ingots of grown 4H and 6H silicon-carbide compounds.
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Sobre autores
D. Avrov
St. Petersburg State Electrotechnical University
Email: siclab-tairov@yandex.ru
Rússia, St. Petersburg, 197376
A. Lebedev
Ioffe Physical—Technical Institute
Email: siclab-tairov@yandex.ru
Rússia, St. Petersburg, 194021
Yu. Tairov
St. Petersburg State Electrotechnical University
Autor responsável pela correspondência
Email: siclab-tairov@yandex.ru
Rússia, St. Petersburg, 197376
