电邮这篇文章 Polytype inclusions and polytype stability in silicon-carbide crystals
- 作者: Avrov D.1, Lebedev A.2, Tairov Y.1
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隶属关系:
- St. Petersburg State Electrotechnical University
- Ioffe Physical—Technical Institute
- 期: 卷 50, 编号 4 (2016)
- 页面: 494-501
- 栏目: Microcrystalline, Nanocrystalline, Porous, and Composite Semiconductors
- URL: https://journals.rcsi.science/1063-7826/article/view/196997
- DOI: https://doi.org/10.1134/S1063782616040059
- ID: 196997
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详细
On the basis of both published data and our own experimental data we consider the main aspects of the problem related to ensuring polytype stability for ingots of grown 4H and 6H silicon-carbide compounds.
作者简介
D. Avrov
St. Petersburg State Electrotechnical University
Email: siclab-tairov@yandex.ru
俄罗斯联邦, St. Petersburg, 197376
A. Lebedev
Ioffe Physical—Technical Institute
Email: siclab-tairov@yandex.ru
俄罗斯联邦, St. Petersburg, 194021
Yu. Tairov
St. Petersburg State Electrotechnical University
编辑信件的主要联系方式.
Email: siclab-tairov@yandex.ru
俄罗斯联邦, St. Petersburg, 197376
