| Issue |
Title |
File |
| Vol 47, No 7 (2018) |
Use of the Modification of the Petri Nets Algorithm for the Logic Simulation of Gate-Level Logic Circuits |
(Eng)
|
|
Bulakh D.A., Kazennov G.G., Lapin A.V.
|
| Vol 47, No 7 (2018) |
Solving the Problems of Routing Interconnects with a Resynthesis for Reconfigurable Systems on a Chip |
(Eng)
|
|
Gavrilov S.V., Zheleznikov D.A., Khvatov V.M.
|
| Vol 47, No 7 (2018) |
Calculation of Transients and Parameters of the Circuit of a Voltage Doubler Based on Switched Capacitors |
(Eng)
|
|
Razuvaev Y.Y.
|
| Vol 47, No 7 (2018) |
A Method for the Development of Indicators of a Transient Period Based on Short-Pulse Shapers in Asynchronous Adders |
(Eng)
|
|
Starykh A.A., Kovalev A.V.
|
| Vol 47, No 7 (2018) |
Design Automation Technique of Silicon Bandgap Voltage Reference |
(Eng)
|
|
Ivanov V.G., Losev V.V.
|
| Vol 47, No 6 (2018) |
Controlling the Si(001) Surface Morphology upon Thermal Annealing in a Vacuum Chamber |
(Eng)
|
|
Rodyakina E.E., Sitnikov S.V., Rogilo D.I., Latyshev A.V.
|
| Vol 47, No 6 (2018) |
Parameters of Plasma and Kinetics of Active Particles in CF4 (CHF3) + Ar Mixtures of a Variable Initial Composition |
(Eng)
|
|
Efremov A.M., Murin D.B., Kwon K.
|
| Vol 47, No 6 (2018) |
Quality Control of a Multilayer Spin-Tunnel Structure with the Use of a Combination of Analytical Methods |
(Eng)
|
|
Trushin O.S., Simakin S.G., Vasiliev S.V., Smirnov E.A.
|
| Vol 47, No 6 (2018) |
Investigation of Alloyed Ohmic Contacts in Epitaxial Tellurium-Doped Gallium Arsenide Layers |
(Eng)
|
|
Egorkin V.I., Zemlyakov V.E., Nezhentsev A.V., Garmash V.I., Kalyuzhnyi N.A., Mintairov S.A.
|
| Vol 47, No 6 (2018) |
Operational Features of MEMS with an Even Number of Electrodes |
(Eng)
|
|
Dragunov V.P., Ostertak D.I.
|
| Vol 47, No 6 (2018) |
Simulation the Effects of Single Nuclear Particles on STG RS Triggers with Transistors Spacing into Two Groups |
(Eng)
|
|
Stenin V.Y., Katunin Y.V.
|
| Vol 47, No 6 (2018) |
Modeling the Dynamics of the Integral Dielectric Permittivity of a Porous Low-K Organosilicate Film during the Dry Etching of a Photoresist in O2 Plasma |
(Eng)
|
|
Rezvanov A.A., Matyushkin I.V., Gushchin O.P., Gornev E.S.
|
| Vol 47, No 6 (2018) |
Etching of SiC in Low Power Inductively-Coupled Plasma |
(Eng)
|
|
Osipov A.A., Aleksandrov S.E., Solov’ev Y.V., Uvarov A.A., Osipov A.A.
|
| Vol 47, No 6 (2018) |
Etching of GaAs in the Plasma of a Freon R-12–Argon (CCl2F2/Ar) Mixture |
(Eng)
|
|
Murin D.B., Dunaev A.V.
|
| Vol 47, No 6 (2018) |
Stacked Gate FinFET with Gate Extension for Improved Gate Control |
(Eng)
|
|
Sangeeta Mangesh ., Chopra P., Saini K.
|
| Vol 47, No 5 (2018) |
Implementation of a Two-Qubit C-NOT Quantum Gate in a System of Two Double Quantum Dots, a Microcavity, and a Laser |
(Eng)
|
|
Tsukanov A.V., Chekmachev V.G.
|
| Vol 47, No 5 (2018) |
Analytic Model of Transit-Time Diodes and Transistors for the Generation and Detection of THz Radiation |
(Eng)
|
|
Vyurkov V.V., Khabutdinov R.R., Nemtsov A.B., Semenikhin I.A., Rudenko M.K., Rudenko K.V., Lukichev V.F.
|
| Vol 47, No 5 (2018) |
Investigation of a Capacitor Array of a Composite Capacitive Touch Panel |
(Eng)
|
|
Vlasov A.I., Krivoshein A.I., Terent’ev D.S., Shakhnov V.A.
|
| Vol 47, No 5 (2018) |
Investigation of Characteristics of Electrostatically Actuated MEMS Switch with an Active Contact Breaking Mechanism |
(Eng)
|
|
Uvarov I.V., Kupriyanov A.N.
|
| Vol 47, No 5 (2018) |
Reliability Investigation of 0.18-μm SOI MOS Transistors at High Temperatures |
(Eng)
|
|
Benediktov A.S., Ignatov P.V., Mikhailov A.A., Potupchik A.G.
|
| Vol 47, No 5 (2018) |
Investigation of the Process of Plasma Through Etching of HkMG Stack of Nanotransistor with a 32-nm Critical Dimension |
(Eng)
|
|
Myakonkikh A.V., Kuvaev K.Y., Tatarintsev A.A., Orlikovskii N.A., Rudenko K.V., Guschin O.P., Gornev E.S.
|
| Vol 47, No 5 (2018) |
Applications of the Technology of Fast Neutral Particle Beams in Micro- and Nanoelectronics |
(Eng)
|
|
Kudrya V.P., Maishev Y.P.
|
| Vol 47, No 5 (2018) |
The Model of the Process of the Chemical Mechanical Polishing of the Copper Metallization, Based on the Formation of the Passivation Layer |
(Eng)
|
|
Makhviladze T.M., Sarychev M.E.
|
| Vol 47, No 5 (2018) |
Nanosecond-Pulse Annealing of Heavily Doped Ge:Sb Layers on Ge Substrates |
(Eng)
|
|
Batalov R.I., Bayazitov R.M., Novikov H.A., Faizrakhmanov I.A., Shustov V.A., Ivlev G.D.
|
| Vol 47, No 4 (2018) |
Features of the Current Flow in Injection Structures Based on PbSnTe:In Films |
(Eng)
|
|
Ishchenko D.V., Neizvestnyi I.G., Pashchin N.S., Sherstyakova V.N.
|
| 101 - 125 of 328 Items |
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