| Шығарылым |
Атауы |
Файл |
| Том 47, № 7 (2018) |
Use of the Modification of the Petri Nets Algorithm for the Logic Simulation of Gate-Level Logic Circuits |
(Eng)
|
|
Bulakh D., Kazennov G., Lapin A.
|
| Том 47, № 7 (2018) |
Solving the Problems of Routing Interconnects with a Resynthesis for Reconfigurable Systems on a Chip |
(Eng)
|
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Gavrilov S., Zheleznikov D., Khvatov V.
|
| Том 47, № 7 (2018) |
Calculation of Transients and Parameters of the Circuit of a Voltage Doubler Based on Switched Capacitors |
(Eng)
|
|
Razuvaev Y.
|
| Том 47, № 7 (2018) |
A Method for the Development of Indicators of a Transient Period Based on Short-Pulse Shapers in Asynchronous Adders |
(Eng)
|
|
Starykh A., Kovalev A.
|
| Том 47, № 7 (2018) |
Design Automation Technique of Silicon Bandgap Voltage Reference |
(Eng)
|
|
Ivanov V., Losev V.
|
| Том 47, № 6 (2018) |
Controlling the Si(001) Surface Morphology upon Thermal Annealing in a Vacuum Chamber |
(Eng)
|
|
Rodyakina E., Sitnikov S., Rogilo D., Latyshev A.
|
| Том 47, № 6 (2018) |
Parameters of Plasma and Kinetics of Active Particles in CF4 (CHF3) + Ar Mixtures of a Variable Initial Composition |
(Eng)
|
|
Efremov A., Murin D., Kwon K.
|
| Том 47, № 6 (2018) |
Quality Control of a Multilayer Spin-Tunnel Structure with the Use of a Combination of Analytical Methods |
(Eng)
|
|
Trushin O., Simakin S., Vasiliev S., Smirnov E.
|
| Том 47, № 6 (2018) |
Investigation of Alloyed Ohmic Contacts in Epitaxial Tellurium-Doped Gallium Arsenide Layers |
(Eng)
|
|
Egorkin V., Zemlyakov V., Nezhentsev A., Garmash V., Kalyuzhnyi N., Mintairov S.
|
| Том 47, № 6 (2018) |
Operational Features of MEMS with an Even Number of Electrodes |
(Eng)
|
|
Dragunov V., Ostertak D.
|
| Том 47, № 6 (2018) |
Simulation the Effects of Single Nuclear Particles on STG RS Triggers with Transistors Spacing into Two Groups |
(Eng)
|
|
Stenin V., Katunin Y.
|
| Том 47, № 6 (2018) |
Modeling the Dynamics of the Integral Dielectric Permittivity of a Porous Low-K Organosilicate Film during the Dry Etching of a Photoresist in O2 Plasma |
(Eng)
|
|
Rezvanov A., Matyushkin I., Gushchin O., Gornev E.
|
| Том 47, № 6 (2018) |
Etching of SiC in Low Power Inductively-Coupled Plasma |
(Eng)
|
|
Osipov A., Aleksandrov S., Solov’ev Y., Uvarov A., Osipov A.
|
| Том 47, № 6 (2018) |
Etching of GaAs in the Plasma of a Freon R-12–Argon (CCl2F2/Ar) Mixture |
(Eng)
|
|
Murin D., Dunaev A.
|
| Том 47, № 6 (2018) |
Stacked Gate FinFET with Gate Extension for Improved Gate Control |
(Eng)
|
|
Sangeeta Mangesh ., Chopra P., Saini K.
|
| Том 47, № 5 (2018) |
Implementation of a Two-Qubit C-NOT Quantum Gate in a System of Two Double Quantum Dots, a Microcavity, and a Laser |
(Eng)
|
|
Tsukanov A., Chekmachev V.
|
| Том 47, № 5 (2018) |
Analytic Model of Transit-Time Diodes and Transistors for the Generation and Detection of THz Radiation |
(Eng)
|
|
Vyurkov V., Khabutdinov R., Nemtsov A., Semenikhin I., Rudenko M., Rudenko K., Lukichev V.
|
| Том 47, № 5 (2018) |
Investigation of a Capacitor Array of a Composite Capacitive Touch Panel |
(Eng)
|
|
Vlasov A., Krivoshein A., Terent’ev D., Shakhnov V.
|
| Том 47, № 5 (2018) |
Investigation of Characteristics of Electrostatically Actuated MEMS Switch with an Active Contact Breaking Mechanism |
(Eng)
|
|
Uvarov I., Kupriyanov A.
|
| Том 47, № 5 (2018) |
Reliability Investigation of 0.18-μm SOI MOS Transistors at High Temperatures |
(Eng)
|
|
Benediktov A., Ignatov P., Mikhailov A., Potupchik A.
|
| Том 47, № 5 (2018) |
Investigation of the Process of Plasma Through Etching of HkMG Stack of Nanotransistor with a 32-nm Critical Dimension |
(Eng)
|
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Myakonkikh A., Kuvaev K., Tatarintsev A., Orlikovskii N., Rudenko K., Guschin O., Gornev E.
|
| Том 47, № 5 (2018) |
Applications of the Technology of Fast Neutral Particle Beams in Micro- and Nanoelectronics |
(Eng)
|
|
Kudrya V., Maishev Y.
|
| Том 47, № 5 (2018) |
The Model of the Process of the Chemical Mechanical Polishing of the Copper Metallization, Based on the Formation of the Passivation Layer |
(Eng)
|
|
Makhviladze T., Sarychev M.
|
| Том 47, № 5 (2018) |
Nanosecond-Pulse Annealing of Heavily Doped Ge:Sb Layers on Ge Substrates |
(Eng)
|
|
Batalov R., Bayazitov R., Novikov H., Faizrakhmanov I., Shustov V., Ivlev G.
|
| Том 47, № 4 (2018) |
Features of the Current Flow in Injection Structures Based on PbSnTe:In Films |
(Eng)
|
|
Ishchenko D., Neizvestnyi I., Pashchin N., Sherstyakova V.
|
| Нәтижелер 328 - 101/125 |
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