Mikroèlektronika
ISSN (print): 0544-1269
Founders: Physico-Technical Institute of the Russian Academy of Sciences, Russian Academy of Sciences
Editor-in-Chief: Gennady Yakovlevich Krasnikov, Academician of the Russian Academy of Sciences, Doctor of Technical Sciences
Frequency / Access: 6 issues per year / Subscription
Indexation: White List (2nd level), Higher Attestation Commission List, RISC
Ағымдағы шығарылым



Том 54, № 1 (2025)
ЛИТОГРАФИЯ
Investigation of double patterning method with the usage of antispacer
Аннотация
In this paper we review double lithography method with the usage of antispacer, which allows to form structures of critical layers with sub-193i lithographic dimensions that go beyond the single extreme ultraviolet lithography limits. We present a set of key parameters affecting the process productivity and a method for optimizing the lithographic process.



МОДЕЛИРОВАНИЕ
Calculation of distributions of electron beam energy absorbed in PMMA and Si using various scattering models
Аннотация
This paper describes the simulation of electron beam scattering in polymethylmethacrylate (PMMA) and silicon (Si) using Monte Carlo method. The simulation used various scattering models, including both elastic and inelastic models, with and without secondary electron generation taken into account. For each material, three combinations of scattering models were tested in simulation. As a result, the distributions of absorbed energy and scattering events along the coordinate were obtained. The analysis of these results revealed the characteristic features of each scattering model.



Exposure kinetics of a positive photoresist layer on an optically matched substrate
Аннотация
A number of works devoted to modeling the exposure process of a photoactive layer lying on an optically matched substrate is analyzed. The relationship between Dill's equations and previously obtained systems of equations is shown. Methods for reducing the system of two Dill's partial differential equations to ordinary differential equations, the accuracy of the numerical solution of which can be easily controlled, are considered sequentially. A procedure for using such equations to characterize the photochemical properties of positive photoresists is proposed.



Influence of boundary conditions on transport in a quantum well
Аннотация
The problem of the electrical conductivity of a conducting channel at the boundary of a heterojunction or in a MD transistor is solved, considering the quantum theory of transfer processes. The thickness of the layer can be comparable to and less than the de Broglie wavelength of the charge carriers. The behavior of charge carriers is described by the quantum Liouville equation. The influence of surface scattering of charge carriers is considered through the Soffer boundary conditions. An expression for the electrical conductivity is obtained and its dependence on the strength of the transverse electric field and the roughness parameter of the boundary of the conducting channel with another semiconductor is analyzed. A comparative analysis of theoretical calculations with experimental data is carried out.



NANOSTRUCTURES
Formation of nickel-based composite magnetic nanostructures for microelectronics and nanodiagnostics devices
Аннотация
The article presents results of studying the formation processes of the composite material based on Ni nanostructures arrays – nanopillars or nanotubes embedded in thin porous anodic alumina by electrochemical deposition. Ni nanopillars were formed in the direct current mode (dc-deposition); nanotubes – in the alternating current mode (ac-deposition). Morphology analysis of these nanostructures shows that inner profile of the deposit and micromorphology of the nanostructure change with deposition duration and depend on the motion mode and diameter of hydrogen bubbles released under Ni electrodeposition. The morphology, structure, and electrochemical properties of the obtained composite materials were studied using scanning electron microscopy, atomic force microscopy, X-ray diffraction analysis, and the method of linear polarization in potentiodynamic mode. The obtained nanostructures can be used to fabricate planar electrodes for electrochemical biosensors and another nanodiagnostics and microelectronics devices



ТЕХНОЛОГИИ
AZ nLOF series photoresist films on monocrystalline silicon
Аннотация
Films of negative photoresists (FR) AZ nLOF 2020, AZ nLOF 2070 and AZ nLOF 5510 with a thickness of 0.99–6.0 microns deposited on the surface of silicon wafers by centrifugation have been studied by the methods of microindentation and IR Fourier spectroscopy using a diffuse reflection module. It has been established that FR films behave like elastoplastic materials in which tensile elastic stresses are present. The most intense in the reflective absorption spectra of AZ nLOF photoresistive films are bands of valence vibrations of the aromatic ring (≈ 1500 cm–1), pulsation vibrations of the aromatic ring carbon skeleton (double maximum ≈ 1595 and 1610 cm–1), a wide structured band with several maxima in the range of 1050–1270 cm–1 and a band with a maximum of ≈ 1430 cm–1 due to vibrations of the benzene ring, associated with the CH2 bridge. It is shown that the line corresponding to the vibrations of the CH3 groups with a maximum at 2945 cm–1 is caused by the solvent. The differences in the FR spectra of AZ nLOF 2020 and AZ nLOF 2070 are associated with the presence of a residual solvent in the films and the interaction of its molecules with the aromatic rings of the main FR component – phenol-formaldehyde.



Study of deposition modes of Cu2O films by RF magnetron sputtering for application in solar cell structures
Аннотация
The deposition of Cu2O films was carried out by radio-frequency (RF) magnetron sputtering in an oxygen-free environment at room temperature. The effect of the power and pressure in the chamber on the deposition rate, structural and optical properties of Cu2O films was studied. It was shown that the dependence of the Cu2O film deposition rate on the sputtering power is almost linear and increases slightly with increasing argon pressure in the chamber. It was found that all Cu2O films have a predominantly nanocrystalline structure consisting of columnar grains, the average size of which increases from 10 to 30 nm with an increase in the sputtering power from 25 to 100 W and in the chamber pressure from 3·10–3 to 7·10–3 mbar. At the same time, the Cu2O films have a relatively smooth surface with an average roughness in the range from 4.5 to 5.9 nm. It has been established that the optimal sputtering power for deposition of Cu2O films with the largest grain size and low surface roughness is 75 W and chamber pressure of 5·10–3 mbar. It has been shown that under this magnetron sputtering mode, the Cu2O film has two main diffraction peaks, which correspond to the orientations of the crystal planes (111) and (200) for the cubic Cu2O phase, as well as high optical absorption of up to about 600 nm and a band gap of 2.18 eV. The models of solar cells based on the ZnO/Cu2O heterojunction were manufactured by magnetron sputtering at room temperature and their current-voltage characteristics were studied. The obtained results can be used in the development of structures and technological processes for the formation of solar cells on glass and flexible substrates using the magnetron sputtering method.



Development of atomic layer deposition technological platform for the synthesis of micro- and nanoelectronics materials
Аннотация
This work presents the results of designing, constructing and testing the atomic layer deposition (ALD) platform for the synthesis of various semiconductor, dielectric, metallized and barrier thin-film structures with a thickness of < 100 nm. This ALD platform can be used in the field of micro- and nanoelectronics, with the possibility of in situ monitoring of mass and thickness growth processes with an accuracy of 0.3 ng/cm2 and 0.037 Å/cycle, respectively. In this ALD platform, the number of imported components is minimized due to the use of electronics and vacuum fittings from domestic manufacturers, which in turn will significantly reduce the cost of this type of installation and make atomic layer deposition technology available to most scientific and educational organizations in Russia.


