Structure and materials of FinFET transistors

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Abstract

This work provides a detailed review of the FinFET three-dimensional transistor technologies evolution. The features of the FinFET transistors formation by various manufacturers, as well as the materials used in them and the main approaches to improving the production technologies are considered. Analysis and comparison of the key characteristics of FinFET transistors produced using technology node from 22 to 3 nm have been conducted based on publicly available sources.

About the authors

D. A. Abdullayev

Institute of Nanotechnology and Microelectronics of RAS

Email: abdullaev.d@inme-ras.ru
Moscow, Russia

L. M. Kolchina

Institute of Nanotechnology and Microelectronics of RAS

Moscow, Russia

R. A. Milovanov

Institute of Nanotechnology and Microelectronics of RAS

Moscow, Russia

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