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卷 53, 编号 15 (2019)
Predicting the Conditions for the Vapor-Phase Epitaxy of the III–V Compounds
Vigdorovich E.
PDF
(Eng)
卷 50, 编号 13 (2016)
Study of the structure and composition of the strained epitaxial layer in the InAlAs/GaAs(100) heterostructure by transmission electron microscopy
Lovygin M., Borgardt N., Bugaev A., Volkov R., Seibt M.
PDF
(Eng)
卷 52, 编号 11 (2018)
The Effect of the Composition of a Carrier Gas during the Growth of a Mn delta-Layer on the Electrical and Magnetic Properties of GaAs Structures
Kalentyeva I., Vikhrova O., Danilov Y., Zvonkov B., Kudrin A., Antonov I.
PDF
(Eng)
卷 53, 编号 8 (2019)
Investigation of the Current–Voltage Characteristics of New MnO2/GaAs(100) and V2O5/GaAs(100) Heterostructures Subjected to Heat Treatment
Sladkopevtsev B., Kotov G., Arsentyev I., Shashkin I., Mittova I., Tomina E., Samsonov A., Kostenko P.
PDF
(Eng)
卷 52, 编号 15 (2018)
Studying the Effect of Electrically Active Impurities Coming from Trimethylgallium Synthesized by Different Means on the Electrophysical Characteristics of Gallium Arsenide Epitaxial Layers
Revin M., Kotkov A., Ivanov V., Rad’kov Y., Svinkov N., Artemov A., Gribov B.
PDF
(Eng)
卷 50, 编号 5 (2016)
GaAs/InGaAsN heterostructures for multi-junction solar cells
Nikitina E., Gudovskikh A., Lazarenko A., Pirogov E., Sobolev M., Zelentsov K., Morozov I., Egorov A.
PDF
(Eng)
卷 52, 编号 11 (2018)
Plasma Chemical Etching of Gallium Arsenide in C2F5Cl-Based Inductively Coupled Plasma
Okhapkin A., Yunin P., Drozdov M., Kraev S., Skorokhodov E., Shashkin V.
PDF
(Eng)
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