| 期 |
栏目 |
标题 |
文件 |
| 卷 52, 编号 2 (2018) |
Fabrication, Treatment, and Testing of Materials and Structures |
Electrical Activity of Extended Defects in Multicrystalline Silicon |
|
| 卷 53, 编号 1 (2019) |
Microcrystalline, Nanocrystalline, Porous, and Composite Semiconductors |
Dependence of the Bulk Electrical Properties of Multisilicon on the Grain Misorientation Parameters |
|
| 卷 53, 编号 1 (2019) |
Physics of Semiconductor Devices |
Simulation of the Parameters of a Titanium-Tritide-Based Beta-Voltaic Cell |
|
| 卷 53, 编号 2 (2019) |
Microcrystalline, Nanocrystalline, Porous, and Composite Semiconductors |
Thermoresistive Semiconductor SiC/Si Composite Material |
|
| 卷 53, 编号 4 (2019) |
Nonelectronic Properties of Semiconductors (Atomic Structure, Diffusion) |
Effect of Nickel and Copper Introduced at Room Temperature on the Recombination Properties of Extended Defects in Silicon |
|
