| 期 |
栏目 |
标题 |
文件 |
| 卷 50, 编号 11 (2016) |
XX International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 14–18, 2016 |
Heavily doped GaAs:Te layers grown by MOVPE using diisopropyl telluride as a source |
|
| 卷 50, 编号 12 (2016) |
XX International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 14–18, 2016 |
Atomic composition and electrical characteristics of epitaxial CVD diamond layers doped with boron |
|
| 卷 51, 编号 7 (2017) |
XV International Conference “Thermoelectrics and Their Applications—2016”, St. Petersburg, November 15–16, 2016 |
Structure of bismuth films obtained using an array of identically oriented single-crystal bismuth islands preliminarily grown on a substrate |
|
| 卷 51, 编号 7 (2017) |
XV International Conference “Thermoelectrics and Their Applications—2016”, St. Petersburg, November 15–16, 2016 |
Measurement of the thickness of block-structured bismuth films by atomic-force microscopy combined with selective chemical etching |
|
| 卷 51, 编号 7 (2017) |
XV International Conference “Thermoelectrics and Their Applications—2016”, St. Petersburg, November 15–16, 2016 |
Dependence of the surface morphology of ultrathin bismuth films on mica substrates on the film thickness |
|
| 卷 51, 编号 7 (2017) |
XV International Conference “Thermoelectrics and Their Applications—2016”, St. Petersburg, November 15–16, 2016 |
Galvanomagnetic properties of bismuth films with a thin antimony coating or sublayer |
|
| 卷 51, 编号 8 (2017) |
Erratum |
Erratum to: “Atomic composition and electrical characteristics of epitaxial CVD diamond layers doped with boron” |
|
| 卷 51, 编号 12 (2017) |
XXI International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 13–16, 2017 |
Specific features of the photoexcitation spectra of epitaxial InN layers grown by molecular-beam epitaxy with the plasma activation of nitrogen |
|
| 卷 53, 编号 5 (2019) |
XVI International Conference “thermoelectrics and Their Applications–2018” (Iscta 2018,) St. Petersburg, October 8–12, 2018 |
The Thermoelectric Power of Bi1 –xSbx Films (0 ≤ x ≤ 0.15) on Mica and Polyimide Substrates in the Temperature Range of 77–300 K |
|
| 卷 53, 编号 5 (2019) |
XVI International Conference “thermoelectrics and Their Applications–2018” (Iscta 2018,) St. Petersburg, October 8–12, 2018 |
The Band-Structure Parameters of Bi1 –xSbx (0 ≤ x ≤ 0.15) Thin Films on Substrates with Different Thermal-Expansion Coefficients |
|
| 卷 53, 编号 6 (2019) |
XVI International Conference “thermoelectrics and Their Applications–2018” (Iscta 2018,) St. Petersburg, October 8–12, 2018 |
Specific Features of the Quantum-Size Effect in Transport Phenomena in Bismuth-Thin Films on Mica Substrates |
|
| 卷 53, 编号 10 (2019) |
Xxiii International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 11–14, 2019 |
Ohmic Contacts to CVD Diamond with Boron-Doped Delta Layers |
|
