Effect of Injection Depletion in p-Si–n-(Si2)1 –x(ZnSe)x (0 ≤ x ≤ 0.01) Heterostructure
- 作者: Saidov A.1, Leyderman A.1, Usmonov S.1, Amonov K.1
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隶属关系:
- Starodubtsev Physical–Technical Institute, Academy of Sciences of Uzbekistan
- 期: 卷 52, 编号 9 (2018)
- 页面: 1188-1192
- 栏目: Microcrystalline, Nanocrystalline, Porous, and Composite Semiconductors
- URL: https://journals.rcsi.science/1063-7826/article/view/204057
- DOI: https://doi.org/10.1134/S1063782618090142
- ID: 204057
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详细
The current–voltage characteristics of p-Si–n-(Si2)1 –x(ZnSe)x (0 ≤ x ≤ 0.01) heterostructures are studied at various temperatures. It is found that the current–voltage characteristics of such structures contain a portion of a sublinear increase in the current with voltage such as V = V0 exp(Jad). The concentrations of deep impurities responsible for the appearance of the sublinear portion in the current–voltage characteristic are estimated. The experimental results are explained based on the theory of the injection depletion effect.
作者简介
A. Saidov
Starodubtsev Physical–Technical Institute, Academy of Sciences of Uzbekistan
编辑信件的主要联系方式.
Email: kvant.ph@mail.ru
乌兹别克斯坦, Tashkent, 100084
A. Leyderman
Starodubtsev Physical–Technical Institute, Academy of Sciences of Uzbekistan
Email: kvant.ph@mail.ru
乌兹别克斯坦, Tashkent, 100084
Sh. Usmonov
Starodubtsev Physical–Technical Institute, Academy of Sciences of Uzbekistan
Email: kvant.ph@mail.ru
乌兹别克斯坦, Tashkent, 100084
K. Amonov
Starodubtsev Physical–Technical Institute, Academy of Sciences of Uzbekistan
Email: kvant.ph@mail.ru
乌兹别克斯坦, Tashkent, 100084