Effect of Injection Depletion in p-Si–n-(Si2)1 –x(ZnSe)x (0 ≤ x ≤ 0.01) Heterostructure
- Авторы: Saidov A.1, Leyderman A.1, Usmonov S.1, Amonov K.1
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Учреждения:
- Starodubtsev Physical–Technical Institute, Academy of Sciences of Uzbekistan
- Выпуск: Том 52, № 9 (2018)
- Страницы: 1188-1192
- Раздел: Microcrystalline, Nanocrystalline, Porous, and Composite Semiconductors
- URL: https://journals.rcsi.science/1063-7826/article/view/204057
- DOI: https://doi.org/10.1134/S1063782618090142
- ID: 204057
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Аннотация
The current–voltage characteristics of p-Si–n-(Si2)1 –x(ZnSe)x (0 ≤ x ≤ 0.01) heterostructures are studied at various temperatures. It is found that the current–voltage characteristics of such structures contain a portion of a sublinear increase in the current with voltage such as V = V0 exp(Jad). The concentrations of deep impurities responsible for the appearance of the sublinear portion in the current–voltage characteristic are estimated. The experimental results are explained based on the theory of the injection depletion effect.
Об авторах
A. Saidov
Starodubtsev Physical–Technical Institute, Academy of Sciences of Uzbekistan
Автор, ответственный за переписку.
Email: kvant.ph@mail.ru
Узбекистан, Tashkent, 100084
A. Leyderman
Starodubtsev Physical–Technical Institute, Academy of Sciences of Uzbekistan
Email: kvant.ph@mail.ru
Узбекистан, Tashkent, 100084
Sh. Usmonov
Starodubtsev Physical–Technical Institute, Academy of Sciences of Uzbekistan
Email: kvant.ph@mail.ru
Узбекистан, Tashkent, 100084
K. Amonov
Starodubtsev Physical–Technical Institute, Academy of Sciences of Uzbekistan
Email: kvant.ph@mail.ru
Узбекистан, Tashkent, 100084