Effect of Injection Depletion in p-Si–n-(Si2)1 –x(ZnSe)x (0 ≤ x ≤ 0.01) Heterostructure
- Авторлар: Saidov A.1, Leyderman A.1, Usmonov S.1, Amonov K.1
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Мекемелер:
- Starodubtsev Physical–Technical Institute, Academy of Sciences of Uzbekistan
- Шығарылым: Том 52, № 9 (2018)
- Беттер: 1188-1192
- Бөлім: Microcrystalline, Nanocrystalline, Porous, and Composite Semiconductors
- URL: https://journals.rcsi.science/1063-7826/article/view/204057
- DOI: https://doi.org/10.1134/S1063782618090142
- ID: 204057
Дәйексөз келтіру
Аннотация
The current–voltage characteristics of p-Si–n-(Si2)1 –x(ZnSe)x (0 ≤ x ≤ 0.01) heterostructures are studied at various temperatures. It is found that the current–voltage characteristics of such structures contain a portion of a sublinear increase in the current with voltage such as V = V0 exp(Jad). The concentrations of deep impurities responsible for the appearance of the sublinear portion in the current–voltage characteristic are estimated. The experimental results are explained based on the theory of the injection depletion effect.
Авторлар туралы
A. Saidov
Starodubtsev Physical–Technical Institute, Academy of Sciences of Uzbekistan
Хат алмасуға жауапты Автор.
Email: kvant.ph@mail.ru
Өзбекстан, Tashkent, 100084
A. Leyderman
Starodubtsev Physical–Technical Institute, Academy of Sciences of Uzbekistan
Email: kvant.ph@mail.ru
Өзбекстан, Tashkent, 100084
Sh. Usmonov
Starodubtsev Physical–Technical Institute, Academy of Sciences of Uzbekistan
Email: kvant.ph@mail.ru
Өзбекстан, Tashkent, 100084
K. Amonov
Starodubtsev Physical–Technical Institute, Academy of Sciences of Uzbekistan
Email: kvant.ph@mail.ru
Өзбекстан, Tashkent, 100084