Method for increasing the carrier mobility in the channel of the 4 H -SiC MOSFET

A. I. Mikhaylov; A. V. Afanasyev; V. A. Ilyin; V. V. Luchinin; S. A. Reshanov; A. Schöner

doi:10.1134/S1063782616060178

Method for increasing the carrier mobility in the channel of the 4H-SiC MOSFET

作者: Mikhaylov A.¹, Afanasyev A.¹, Ilyin V.¹, Luchinin V.¹, Reshanov S.², Schöner A.²
隶属关系:
1. St. Petersburg State Electrotechnical University LETI
2. Ascatron AB
期: 卷 50, 编号 6 (2016)
页面: 824-827
栏目: Physics of Semiconductor Devices
URL: https://journals.rcsi.science/1063-7826/article/view/197301
DOI: https://doi.org/10.1134/S1063782616060178
ID: 197301

如何引用文章

全文:

开放存取

##reader.subscriptionAccessGranted##
受限制的访问

订阅存取

详细
作者简介
参考
统计

详细

A new method is suggested for increasing the carrier mobility in the channel of a field-effect transistor based on silicon carbide of the 4H polytype via the oxidation of a bilayer system constituted by a thin layer of silicon nitride and a silicon-dioxide layer. Together with increasing carrier mobility, the average breakdown field strength decreases as compared with the gate insulator thermally grown in an atmosphere of N₂O.