Method for increasing the carrier mobility in the channel of the 4H-SiC MOSFET
- Авторлар: Mikhaylov A.1, Afanasyev A.1, Ilyin V.1, Luchinin V.1, Reshanov S.2, Schöner A.2
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Мекемелер:
- St. Petersburg State Electrotechnical University LETI
- Ascatron AB
- Шығарылым: Том 50, № 6 (2016)
- Беттер: 824-827
- Бөлім: Physics of Semiconductor Devices
- URL: https://journals.rcsi.science/1063-7826/article/view/197301
- DOI: https://doi.org/10.1134/S1063782616060178
- ID: 197301
Дәйексөз келтіру
Аннотация
A new method is suggested for increasing the carrier mobility in the channel of a field-effect transistor based on silicon carbide of the 4H polytype via the oxidation of a bilayer system constituted by a thin layer of silicon nitride and a silicon-dioxide layer. Together with increasing carrier mobility, the average breakdown field strength decreases as compared with the gate insulator thermally grown in an atmosphere of N2O.
Авторлар туралы
A. Mikhaylov
St. Petersburg State Electrotechnical University LETI
Хат алмасуға жауапты Автор.
Email: m.aleksey.spb@gmail.com
Ресей, St. Petersburg, 197376
A. Afanasyev
St. Petersburg State Electrotechnical University LETI
Email: m.aleksey.spb@gmail.com
Ресей, St. Petersburg, 197376
V. Ilyin
St. Petersburg State Electrotechnical University LETI
Email: m.aleksey.spb@gmail.com
Ресей, St. Petersburg, 197376
V. Luchinin
St. Petersburg State Electrotechnical University LETI
Email: m.aleksey.spb@gmail.com
Ресей, St. Petersburg, 197376
S. Reshanov
Ascatron AB
Email: m.aleksey.spb@gmail.com
Швеция, Kista, 16440
A. Schöner
Ascatron AB
Email: m.aleksey.spb@gmail.com
Швеция, Kista, 16440