Method for increasing the carrier mobility in the channel of the 4H-SiC MOSFET
- Authors: Mikhaylov A.I.1, Afanasyev A.V.1, Ilyin V.A.1, Luchinin V.V.1, Reshanov S.A.2, Schöner A.2
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Affiliations:
- St. Petersburg State Electrotechnical University LETI
- Ascatron AB
- Issue: Vol 50, No 6 (2016)
- Pages: 824-827
- Section: Physics of Semiconductor Devices
- URL: https://journals.rcsi.science/1063-7826/article/view/197301
- DOI: https://doi.org/10.1134/S1063782616060178
- ID: 197301
Cite item
Abstract
A new method is suggested for increasing the carrier mobility in the channel of a field-effect transistor based on silicon carbide of the 4H polytype via the oxidation of a bilayer system constituted by a thin layer of silicon nitride and a silicon-dioxide layer. Together with increasing carrier mobility, the average breakdown field strength decreases as compared with the gate insulator thermally grown in an atmosphere of N2O.
About the authors
A. I. Mikhaylov
St. Petersburg State Electrotechnical University LETI
Author for correspondence.
Email: m.aleksey.spb@gmail.com
Russian Federation, St. Petersburg, 197376
A. V. Afanasyev
St. Petersburg State Electrotechnical University LETI
Email: m.aleksey.spb@gmail.com
Russian Federation, St. Petersburg, 197376
V. A. Ilyin
St. Petersburg State Electrotechnical University LETI
Email: m.aleksey.spb@gmail.com
Russian Federation, St. Petersburg, 197376
V. V. Luchinin
St. Petersburg State Electrotechnical University LETI
Email: m.aleksey.spb@gmail.com
Russian Federation, St. Petersburg, 197376
S. A. Reshanov
Ascatron AB
Email: m.aleksey.spb@gmail.com
Sweden, Kista, 16440
A. Schöner
Ascatron AB
Email: m.aleksey.spb@gmail.com
Sweden, Kista, 16440