Method for increasing the carrier mobility in the channel of the 4H-SiC MOSFET
- Autores: Mikhaylov A.1, Afanasyev A.1, Ilyin V.1, Luchinin V.1, Reshanov S.2, Schöner A.2
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Afiliações:
- St. Petersburg State Electrotechnical University LETI
- Ascatron AB
- Edição: Volume 50, Nº 6 (2016)
- Páginas: 824-827
- Seção: Physics of Semiconductor Devices
- URL: https://journals.rcsi.science/1063-7826/article/view/197301
- DOI: https://doi.org/10.1134/S1063782616060178
- ID: 197301
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Resumo
A new method is suggested for increasing the carrier mobility in the channel of a field-effect transistor based on silicon carbide of the 4H polytype via the oxidation of a bilayer system constituted by a thin layer of silicon nitride and a silicon-dioxide layer. Together with increasing carrier mobility, the average breakdown field strength decreases as compared with the gate insulator thermally grown in an atmosphere of N2O.
Sobre autores
A. Mikhaylov
St. Petersburg State Electrotechnical University LETI
Autor responsável pela correspondência
Email: m.aleksey.spb@gmail.com
Rússia, St. Petersburg, 197376
A. Afanasyev
St. Petersburg State Electrotechnical University LETI
Email: m.aleksey.spb@gmail.com
Rússia, St. Petersburg, 197376
V. Ilyin
St. Petersburg State Electrotechnical University LETI
Email: m.aleksey.spb@gmail.com
Rússia, St. Petersburg, 197376
V. Luchinin
St. Petersburg State Electrotechnical University LETI
Email: m.aleksey.spb@gmail.com
Rússia, St. Petersburg, 197376
S. Reshanov
Ascatron AB
Email: m.aleksey.spb@gmail.com
Suécia, Kista, 16440
A. Schöner
Ascatron AB
Email: m.aleksey.spb@gmail.com
Suécia, Kista, 16440