| Выпуск |
Раздел |
Название |
Файл |
| Том 50, № 3 (2016) |
Fabrication, Treatment, and Testing of Materials and Structures |
Optical and Structural Properties of Composite Si:Au Layers Formed by Laser Electrodispersion |
|
| Том 50, № 5 (2016) |
Fabrication, Treatment, and Testing of Materials and Structures |
On the laser detachment of n-GaN films from substrates, based on the strong absorption of IR light by free charge carriers in n+-GaN substrates |
|
| Том 50, № 8 (2016) |
Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena |
Elastic strains and delocalized optical phonons in AlN/GaN superlattices |
|
| Том 51, № 8 (2017) |
Carbon Systems |
Study of the crystal and electronic structure of graphene films grown on 6H-SiC (0001) |
|
| Том 51, № 12 (2017) |
XXI International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 13–16, 2017 |
Specific features of the photoexcitation spectra of epitaxial InN layers grown by molecular-beam epitaxy with the plasma activation of nitrogen |
|
| Том 52, № 5 (2018) |
XXV International Symposium “Nanostructures: Physics and Technology”, Saint Petersburg, Russia, June 26–30, 2017. Nanostructure Technology |
Site-Controlled Growth of GaN Nanorods with Inserted InGaN Quantum Wells on μ-Cone Patterned Sapphire Substrates by Plasma-Assisted MBE |
|
| Том 52, № 6 (2018) |
Fabrication, Treatment, and Testing of Materials and Structures |
Effect of the Sapphire-Nitridation Level and Nucleation-Layer Enrichment with Aluminum on the Structural Properties of AlN Layers |
|
| Том 52, № 14 (2018) |
Graphene |
High Quality Graphene Grown by Sublimation on 4H-SiC (0001) |
|
| Том 53, № 8 (2019) |
Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena |
Template Synthesis of Monodisperse Submicrometer Spherical Nanoporous Silicon Particles |
|
| Том 53, № 8 (2019) |
Fabrication, Treatment, and Testing of Materials and Structures |
Molecular-Beam Epitaxy of Two-Dimensional GaSe Layers on GaAs(001) and GaAs(112) Substrates: Structural and Optical Properties |
|
| Том 53, № 10 (2019) |
Xxiii International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 11–14, 2019 |
Emission Properties of Heavily Doped Epitaxial Indium-Nitride Layers |
|
| Том 53, № 11 (2019) |
Surfaces, Interfaces, and Thin Films |
Boson Peak Related to Ga Nanoclusters in AlGaN Layers Grown by Plasma-Assisted Molecular Beam Epitaxy at Ga-Rich Conditions |
|
| Том 53, № 14 (2019) |
Nanostructures Characterization |
Optical Estimation of the Carrier Concentration and the Value of Strain in Monolayer Graphene Grown on 4H-SiC |
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