| Выпуск |
Раздел |
Название |
Файл |
| Том 50, № 10 (2016) |
Physics of Semiconductor Devices |
GaSb laser-power (λ = 1550 nm) converters: Fabrication method and characteristics |
|
| Том 52, № 4 (2018) |
XXV International Symposium “Nanostructures: Physics and Technology”, Saint Petersburg, June 26–30, 2017. Quantum Wells, Quantum Wires, Quantum Dots, and Band Structure |
Enhancement of Photoconductivity by Carrier Screening Effect in n-GaSb/InAs/p-GaSb Heterostructure with Single Deep Quantum Well |
|
| Том 52, № 8 (2018) |
Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena |
Photoconductivity Amplification in a Type-II n-GaSb/InAs/p-GaSb Heterostructure with a Single QW |
|
| Том 52, № 13 (2018) |
Physics of Semiconductor Devices |
GaInAsP/InP-Based Laser Power Converters (λ = 1064 nm) |
|
| Том 53, № 2 (2019) |
Fabrication, Treatment, and Testing of Materials and Structures |
On the Possibility of Manufacturing Strained InAs/GaSb Superlattices by the MOCVD Method |
|
| Том 53, № 11 (2019) |
Surfaces, Interfaces, and Thin Films |
Investigation of Composition Uniformity in Thickness of GaInAsP Layers Grown on InP Substrates by Vapor-Phase Epitaxy |
|
| Том 53, № 12 (2019) |
Nonelectronic Properties of Semiconductors (Atomic Structure, Diffusion) |
High-Resistivity Gallium Antimonide Produced by Metal–Organic Vapor-Phase Epitaxy |
|
| Том 53, № 16 (2019) |
Nanostructures Technology |
Optical Properties of Short-Period InAs/GaSb Superlattices Grown by MOCVD |
|
