| Выпуск |
Раздел |
Название |
Файл |
| Том 50, № 10 (2016) |
Physics of Semiconductor Devices |
Polarization characteristics of 850-nm vertical-cavity surface-emitting lasers with intracavity contacts and a rhomboidal oxide current aperture |
|
| Том 51, № 3 (2017) |
Electronic Properties of Semiconductors |
Effect of the energy of bombarding electrons on the conductivity of n-4H-SiC (CVD) epitaxial layers |
|
| Том 51, № 11 (2017) |
XXI International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 13–16, 2017 |
Molecular-beam epitaxy of InGaAs/InAlAs/AlAs structures for heterobarrier varactors |
|
| Том 52, № 1 (2018) |
Physics of Semiconductor Devices |
Emission-Line Width and α-Factor of 850-nm Single-Mode Vertical-Cavity Surface-Emitting Lasers Based on InGaAs/AlGaAs Quantum Wells |
|
| Том 52, № 3 (2018) |
Electronic Properties of Semiconductors |
Formation of Radiation Defects by Proton Braking in Lightly Doped n- and p-SiC Layers |
|
| Том 52, № 4 (2018) |
XXV International Symposium “Nanostructures: Physics and Technology”, Saint Petersburg, June 26–30, 2017. Optoelectronics, Optical Properties |
Optical Properties of AlGaAs/GaAs Resonant Bragg Structure at the Second Quantum State |
|
| Том 52, № 10 (2018) |
Physics of Semiconductor Devices |
Effect of Epitaxial-Structure Design and Growth Parameters on the Characteristics of Metamorphic Lasers of the 1.46-μm Optical Range Based on Quantum Dots Grown on GaAs Substrates |
|
| Том 53, № 5 (2019) |
XVI International Conference “thermoelectrics and Their Applications–2018” (Iscta 2018,) St. Petersburg, October 8–12, 2018 |
Thermoelectric Properties of Bi2 –xLuxTe2.7Se0.3 Solid Solutions |
|
| Том 53, № 13 (2019) |
Thermoelectrics and Their Applications |
Effect of Spark Plasma Sintering Temperature on Thermoelectric Properties of Grained Bi1.9Gd0.1Te3 Compound |
|
