Отправить статью по E-mail Thermoresistive Semiconductor SiC/Si Composite Material
- Авторы: Brantov S.1, Yakimov E.2
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Учреждения:
- Institute of Solid-State Physics, Russian Academy of Sciences
- Institute of Microelectronics Technology, Russian Academy of Sciences
- Выпуск: Том 53, № 2 (2019)
- Страницы: 220-223
- Раздел: Microcrystalline, Nanocrystalline, Porous, and Composite Semiconductors
- URL: https://journals.rcsi.science/1063-7826/article/view/205727
- DOI: https://doi.org/10.1134/S1063782619020052
- ID: 205727
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Аннотация
A new method for growing a layer of self-bonded silicon-carbide crystallites on the surface of a flexible carbon foil with subsequent impregnation of the formed structures by silicon melt is developed. Thermistors for a temperature range of 900–1450 K with s thermal sensitivity attaining 11 350 K able to be used in air are fabricated based on this composite material. The structural and electrophysical characteristics of the mentioned material are investigated.
Об авторах
S. Brantov
Institute of Solid-State Physics, Russian Academy of Sciences
Автор, ответственный за переписку.
Email: brantov@isssp.ac.ru
Россия, Chernogolovka, Moscow oblast, 142432
E. Yakimov
Institute of Microelectronics Technology, Russian Academy of Sciences
Email: brantov@isssp.ac.ru
Россия, Chernogolovka, Moscow oblast, 142432
