电邮这篇文章 Thermoresistive Semiconductor SiC/Si Composite Material
- 作者: Brantov S.1, Yakimov E.2
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隶属关系:
- Institute of Solid-State Physics, Russian Academy of Sciences
- Institute of Microelectronics Technology, Russian Academy of Sciences
- 期: 卷 53, 编号 2 (2019)
- 页面: 220-223
- 栏目: Microcrystalline, Nanocrystalline, Porous, and Composite Semiconductors
- URL: https://journals.rcsi.science/1063-7826/article/view/205727
- DOI: https://doi.org/10.1134/S1063782619020052
- ID: 205727
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详细
A new method for growing a layer of self-bonded silicon-carbide crystallites on the surface of a flexible carbon foil with subsequent impregnation of the formed structures by silicon melt is developed. Thermistors for a temperature range of 900–1450 K with s thermal sensitivity attaining 11 350 K able to be used in air are fabricated based on this composite material. The structural and electrophysical characteristics of the mentioned material are investigated.
作者简介
S. Brantov
Institute of Solid-State Physics, Russian Academy of Sciences
编辑信件的主要联系方式.
Email: brantov@isssp.ac.ru
俄罗斯联邦, Chernogolovka, Moscow oblast, 142432
E. Yakimov
Institute of Microelectronics Technology, Russian Academy of Sciences
Email: brantov@isssp.ac.ru
俄罗斯联邦, Chernogolovka, Moscow oblast, 142432
