Мақаланы E-mail арқылы жіберу Thermoresistive Semiconductor SiC/Si Composite Material
- Авторлар: Brantov S.1, Yakimov E.2
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Мекемелер:
- Institute of Solid-State Physics, Russian Academy of Sciences
- Institute of Microelectronics Technology, Russian Academy of Sciences
- Шығарылым: Том 53, № 2 (2019)
- Беттер: 220-223
- Бөлім: Microcrystalline, Nanocrystalline, Porous, and Composite Semiconductors
- URL: https://journals.rcsi.science/1063-7826/article/view/205727
- DOI: https://doi.org/10.1134/S1063782619020052
- ID: 205727
Дәйексөз келтіру
Ашық рұқсат
Рұқсат берілді
Тек жазылушылар үшін
Аннотация
A new method for growing a layer of self-bonded silicon-carbide crystallites on the surface of a flexible carbon foil with subsequent impregnation of the formed structures by silicon melt is developed. Thermistors for a temperature range of 900–1450 K with s thermal sensitivity attaining 11 350 K able to be used in air are fabricated based on this composite material. The structural and electrophysical characteristics of the mentioned material are investigated.
Авторлар туралы
S. Brantov
Institute of Solid-State Physics, Russian Academy of Sciences
Хат алмасуға жауапты Автор.
Email: brantov@isssp.ac.ru
Ресей, Chernogolovka, Moscow oblast, 142432
E. Yakimov
Institute of Microelectronics Technology, Russian Academy of Sciences
Email: brantov@isssp.ac.ru
Ресей, Chernogolovka, Moscow oblast, 142432
