Enviar artigo por via de e-mail Thermoresistive Semiconductor SiC/Si Composite Material
- Autores: Brantov S.1, Yakimov E.2
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Afiliações:
- Institute of Solid-State Physics, Russian Academy of Sciences
- Institute of Microelectronics Technology, Russian Academy of Sciences
- Edição: Volume 53, Nº 2 (2019)
- Páginas: 220-223
- Seção: Microcrystalline, Nanocrystalline, Porous, and Composite Semiconductors
- URL: https://journals.rcsi.science/1063-7826/article/view/205727
- DOI: https://doi.org/10.1134/S1063782619020052
- ID: 205727
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Resumo
A new method for growing a layer of self-bonded silicon-carbide crystallites on the surface of a flexible carbon foil with subsequent impregnation of the formed structures by silicon melt is developed. Thermistors for a temperature range of 900–1450 K with s thermal sensitivity attaining 11 350 K able to be used in air are fabricated based on this composite material. The structural and electrophysical characteristics of the mentioned material are investigated.
Sobre autores
S. Brantov
Institute of Solid-State Physics, Russian Academy of Sciences
Autor responsável pela correspondência
Email: brantov@isssp.ac.ru
Rússia, Chernogolovka, Moscow oblast, 142432
E. Yakimov
Institute of Microelectronics Technology, Russian Academy of Sciences
Email: brantov@isssp.ac.ru
Rússia, Chernogolovka, Moscow oblast, 142432
